ENERGIZATION TEST DEVICE AND ENERGIZATION TEST METHOD
PROBLEM TO BE SOLVED: To provide a technique allowing an electric conduction time to be shortened.SOLUTION: An energization test device comprises: a conductive first buffer material (35) that is provided over a plurality of front surface electrodes (19); a conductive second buffer material (34) that...
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Format: | Patent |
Sprache: | eng ; jpn |
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Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a technique allowing an electric conduction time to be shortened.SOLUTION: An energization test device comprises: a conductive first buffer material (35) that is provided over a plurality of front surface electrodes (19); a conductive second buffer material (34) that comes in contact with back surface electrodes (21 and 22) provided on a lower surface of a semiconductor wafer (31); a first conductive mechanism (33) that is provided at a position sandwiching the first buffer material between the front surface electrodes and itself; and a second conductive mechanism (32) that is provided at a position sandwiching the second buffer material between the back surface electrodes and itself. Each of the back surface electrodes of the semiconductor wafer is connected to a second end part that is an end part opposite to a first end part of a pn junction part (100), and the first and second conductive mechanisms flow current in a forward direction of the pn junction part.SELECTED DRAWING: Figure 4
【課題】本技術は、検査のための通電時間を短くすることができる。【解決手段】通電検査装置は、複数の表面電極(19)に跨って設けられる、導電性の第1の緩衝材(35)と、半導体ウエハ(31)の下面に設けられる裏面電極(21、22)に接触する、導電性の第2の緩衝材(34)と、表面電極との間で第1の緩衝材を挟む位置に設けられる第1の通電機構(33)と、裏面電極との間で第2の緩衝材を挟む位置に設けられる第2の通電機構(32)とを備え、半導体ウエハの裏面電極は、pn接合部(100)の第1の端部とは反対側の端部である第2の端部に接続され、第1の通電機構、および、第2の通電機構は、pn接合部の順方向に電流を流す。【選択図】図4 |
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