SEMICONDUCTOR OPTICAL MODULATOR AND METHOD FOR FORMING THE SAME

PROBLEM TO BE SOLVED: To increase the physical strength of the input/output optical waveguide structure of a semiconductor optical modulator having an InP substrate.SOLUTION: The semiconductor optical modulator comprises: a semi-insulating InP substrate; a ground contact layer formed on the semi-ins...

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Bibliographische Detailangaben
Hauptverfasser:	SHIBATA YASUO, KIKUCHI NOBUHIRO, KAYAO NORIHIDE
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To increase the physical strength of the input/output optical waveguide structure of a semiconductor optical modulator having an InP substrate.SOLUTION: The semiconductor optical modulator comprises: a semi-insulating InP substrate; a ground contact layer formed on the semi-insulating InP substrate; a semiconductor high mesa optical waveguide structure formed on the ground contact layer and including a first cladding layer formed on the ground contact layer, a core layer formed on the first cladding layer and a second cladding layer formed on the core layer; an insulating film covering the semiconductor high mesa optical waveguide structure; and an organic film covering a part on the insulating film in the side of the semiconductor high mesa optical waveguide structure.SELECTED DRAWING: Figure 4 【課題】ＩｎＰ基板を有する半導体光変調器の入出力光導波路構造の物理的な強度を増加させる。【解決手段】本発明は、半導体光変調器であって、半絶縁性ＩｎＰ基板と、半絶縁性ＩｎＰ基板上に形成されたグランドコンタクト層と、グランドコンタクト層上に形成された半導体ハイメサ光導波路構造であって、グランドコンタクト層上に形成された第１のクラッド層と、第１のクラッド層上に形成されたコア層と、コア層上に形成された第２のクラッド層とを備える半導体ハイメサ光導波路構造と半導体ハイメサ光導波路構造を覆う絶縁膜と、半導体ハイメサ光導波路構造の脇の絶縁膜上の一部に被覆された有機膜とを備えることを特徴とする。【選択図】図４