METHOD FOR MANUFACTURING SEMICONDUCTOR CERAMIC COMPOSITION, SEMICONDUCTOR CERAMIC COMPOSITION, AND PTC ELEMENT

PROBLEM TO BE SOLVED: To provide a manufacturing method capable of improving a resistance temperature coefficient α in a semiconductor ceramic composition having such a composition that a part of Ba is substituted, for instance, with Bi-Na.SOLUTION: A method for manufacturing a semiconductor ceramic composition having such a composition that a part of Ba in a BaTiO-based oxide is substituted with Bi and A (A is at least one element of alkali metal, and essentially contains Na.) includes baking a raw material at a temperature higher than 1,350°C, and then a temperature-lowering process of lowering the temperature at a temperature-lowering speed of 150°C/h or less and changing the temperature-lowering speed to a temperature-lowering speed of more than 150°C/h between 1,150°C and 1,350°C.SELECTED DRAWING: Figure 1 【課題】Baの一部を例えばBi-Naで置換した組成を有する半導体磁器組成物において抵抗温度係数αを向上することが可能な製造方法の提供。【解決手段】BaTiO3系酸化物におけるBaの一部をBiおよびA（Aはアルカリ金属の少なくとも一種の元素であってNaを必須で含む）で置換した組成を有する半導体磁器組成物の製造方法であって、１３５０℃超の温度で焼成した後、１５０℃/ｈ以下の降温速度で降温を始め、その後、１１５０〜１３５０℃の範囲の間で１５０℃/ｈ超の降温速度に変える降温過程を有する半導体磁器組成物の製造方法。【選択図】図１