HEAT RADIATION STRUCTURE OF SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a heat radiation structure of a semiconductor device which can be applied to a thin semiconductor device for surface mounting, achieves excellent heat radiation performance, and preferably achieves excellent insulation reliability.SOLUTION: A heat radiation structure...
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| creator | OMURA HIDEKAZU |
| description | PROBLEM TO BE SOLVED: To provide a heat radiation structure of a semiconductor device which can be applied to a thin semiconductor device for surface mounting, achieves excellent heat radiation performance, and preferably achieves excellent insulation reliability.SOLUTION: A heat radiation structure 101 of a semiconductor device 10 has an electric joint surface 11a electrically connected with a substrate 20 and a heat radiation surface 11b at an opposite side of the electric joint surface 11a. The heat radiation surface 11b joins to or contacts with a heat spreader 31 through a non-insulation component 32, and the heat spreader 31 joins to or contacts with the heat sink 30 through an insulation component 41.SELECTED DRAWING: Figure 1
【課題】表面実装用の薄型半導体装置に適用できる優れた放熱性を備える半導体装置の放熱構造、好ましくは優れた絶縁信頼性も兼ね備える半導体装置の放熱構造を提供する。【解決手段】基板２０と電気的に接続される電気的接合面１１ａと、その反対側の放熱面１１ｂとを有する半導体デバイス１０の放熱構造１０１であって、放熱面１１ｂが非絶縁部品３２を介してヒートスプレッダ３１に接合または接触するとともに、このヒートスプレッダ３１が絶縁部品４１を介してヒートシンク３０に接合または接触している。【選択図】図１ |
| format | Patent |
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【課題】表面実装用の薄型半導体装置に適用できる優れた放熱性を備える半導体装置の放熱構造、好ましくは優れた絶縁信頼性も兼ね備える半導体装置の放熱構造を提供する。【解決手段】基板２０と電気的に接続される電気的接合面１１ａと、その反対側の放熱面１１ｂとを有する半導体デバイス１０の放熱構造１０１であって、放熱面１１ｂが非絶縁部品３２を介してヒートスプレッダ３１に接合または接触するとともに、このヒートスプレッダ３１が絶縁部品４１を介してヒートシンク３０に接合または接触している。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ; PRINTED CIRCUITS ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171019&DB=EPODOC&CC=JP&NR=2017191904A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171019&DB=EPODOC&CC=JP&NR=2017191904A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OMURA HIDEKAZU</creatorcontrib><title>HEAT RADIATION STRUCTURE OF SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To provide a heat radiation structure of a semiconductor device which can be applied to a thin semiconductor device for surface mounting, achieves excellent heat radiation performance, and preferably achieves excellent insulation reliability.SOLUTION: A heat radiation structure 101 of a semiconductor device 10 has an electric joint surface 11a electrically connected with a substrate 20 and a heat radiation surface 11b at an opposite side of the electric joint surface 11a. The heat radiation surface 11b joins to or contacts with a heat spreader 31 through a non-insulation component 32, and the heat spreader 31 joins to or contacts with the heat sink 30 through an insulation component 41.SELECTED DRAWING: Figure 1
【課題】表面実装用の薄型半導体装置に適用できる優れた放熱性を備える半導体装置の放熱構造、好ましくは優れた絶縁信頼性も兼ね備える半導体装置の放熱構造を提供する。【解決手段】基板２０と電気的に接続される電気的接合面１１ａと、その反対側の放熱面１１ｂとを有する半導体デバイス１０の放熱構造１０１であって、放熱面１１ｂが非絶縁部品３２を介してヒートスプレッダ３１に接合または接触するとともに、このヒートスプレッダ３１が絶縁部品４１を介してヒートシンク３０に接合または接触している。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</subject><subject>PRINTED CIRCUITS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDwcHUMUQhydPF0DPH091MIDgkKdQ4JDXJV8HdTCHb19XT293MBivgHKbi4hnk6u_IwsKYl5hSn8kJpbgYlN9cQZw_d1IL8-NTigsTk1LzUknivACMDQ3NDS0NLAxNHY6IUAQCIaibh</recordid><startdate>20171019</startdate><enddate>20171019</enddate><creator>OMURA HIDEKAZU</creator><scope>EVB</scope></search><sort><creationdate>20171019</creationdate><title>HEAT RADIATION STRUCTURE OF SEMICONDUCTOR DEVICE</title><author>OMURA HIDEKAZU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2017191904A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</topic><topic>PRINTED CIRCUITS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>OMURA HIDEKAZU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OMURA HIDEKAZU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HEAT RADIATION STRUCTURE OF SEMICONDUCTOR DEVICE</title><date>2017-10-19</date><risdate>2017</risdate><abstract>PROBLEM TO BE SOLVED: To provide a heat radiation structure of a semiconductor device which can be applied to a thin semiconductor device for surface mounting, achieves excellent heat radiation performance, and preferably achieves excellent insulation reliability.SOLUTION: A heat radiation structure 101 of a semiconductor device 10 has an electric joint surface 11a electrically connected with a substrate 20 and a heat radiation surface 11b at an opposite side of the electric joint surface 11a. The heat radiation surface 11b joins to or contacts with a heat spreader 31 through a non-insulation component 32, and the heat spreader 31 joins to or contacts with the heat sink 30 through an insulation component 41.SELECTED DRAWING: Figure 1
【課題】表面実装用の薄型半導体装置に適用できる優れた放熱性を備える半導体装置の放熱構造、好ましくは優れた絶縁信頼性も兼ね備える半導体装置の放熱構造を提供する。【解決手段】基板２０と電気的に接続される電気的接合面１１ａと、その反対側の放熱面１１ｂとを有する半導体デバイス１０の放熱構造１０１であって、放熱面１１ｂが非絶縁部品３２を介してヒートスプレッダ３１に接合または接触するとともに、このヒートスプレッダ３１が絶縁部品４１を介してヒートシンク３０に接合または接触している。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS PRINTED CIRCUITS SEMICONDUCTOR DEVICES |
| title | HEAT RADIATION STRUCTURE OF SEMICONDUCTOR DEVICE |
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