HEAT RADIATION STRUCTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a heat radiation structure of a semiconductor device which can be applied to a thin semiconductor device for surface mounting, achieves excellent heat radiation performance, and preferably achieves excellent insulation reliability.SOLUTION: A heat radiation structure...

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1. Verfasser: OMURA HIDEKAZU
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a heat radiation structure of a semiconductor device which can be applied to a thin semiconductor device for surface mounting, achieves excellent heat radiation performance, and preferably achieves excellent insulation reliability.SOLUTION: A heat radiation structure 101 of a semiconductor device 10 has an electric joint surface 11a electrically connected with a substrate 20 and a heat radiation surface 11b at an opposite side of the electric joint surface 11a. The heat radiation surface 11b joins to or contacts with a heat spreader 31 through a non-insulation component 32, and the heat spreader 31 joins to or contacts with the heat sink 30 through an insulation component 41.SELECTED DRAWING: Figure 1 【課題】表面実装用の薄型半導体装置に適用できる優れた放熱性を備える半導体装置の放熱構造、好ましくは優れた絶縁信頼性も兼ね備える半導体装置の放熱構造を提供する。【解決手段】基板20と電気的に接続される電気的接合面11aと、その反対側の放熱面11bとを有する半導体デバイス10の放熱構造101であって、放熱面11bが非絶縁部品32を介してヒートスプレッダ31に接合または接触するとともに、このヒートスプレッダ31が絶縁部品41を介してヒートシンク30に接合または接触している。【選択図】図1