CONDUCTIVE FILM-ATTACHED COLUMNAR INGOT SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, SILICIDE-BASED THERMOELECTRIC CONVERSION ELEMENT, METHOD FOR MANUFACTURING THE SAME, THERMOELECTRIC CONVERSION MODULE, AND COMPOSITION FOR FORMING ELECTRODE LAYER OF SILICIDE-BASED THERMOELECTRIC CONVERSION ELEMENT

PROBLEM TO BE SOLVED: To provide: a conductive film-attached columnar ingot substrate superior in adhesion between a conductive film and a columnar ingot substrate; a method for manufacturing the conductive film-attached columnar ingot substrate; a silicide-based thermoelectric conversion element cut from the conductive film-attached columnar ingot substrate; a method for manufacturing the silicide-based thermoelectric conversion element; a thermoelectric conversion module including the silicide-based thermoelectric conversion element; and a composition for forming an electrode layer of the silicide-based thermoelectric conversion element.SOLUTION: A conductive film-attached columnar ingot substrate to be used to cut from a plurality of thermoelectric conversion elements comprises: a columnar ingot substrate made of a silicide-based thermoelectric conversion material; and a conductive film provided on one or each of opposing faces of the columnar ingot substrate, and including a boron oxide.SELECTED DRAWING: None 【課題】導電膜と柱状インゴット基板との密着性に優れた導電膜付き柱状インゴット基板及びその製造方法、該導電膜付き柱状インゴット基板から切り出されるシリサイド系熱電変換素子及びその製造方法、該シリサイド系熱電変換素子を備える熱電変換モジュール、並びにシリサイド系熱電変換素子の電極層形成用組成物を提供する。【解決手段】複数個の熱電変換素子の切り出しに用いられる導電膜付き柱状インゴット基板であって、シリサイド系熱電変換材料からなる柱状インゴット基板と、該柱状インゴット基板の片面又は両面に設けられた、酸化ホウ素を含有する導電膜と、を有する導電膜付き柱状インゴット基板。【選択図】なし