GROUP III NITRIDE SUBSTRATE, AND PRODUCTION METHOD OF GROUP III NITRIDE CRYSTAL
PROBLEM TO BE SOLVED: To provide a production method of a high-quality group III nitride crystal.SOLUTION: A group III nitride substrate has a base plate of a group III nitride including a front surface and a rear surface each having a different Mg concentration. A high-quality group III nitride cry...
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| creator | OKAYAMA YOSHIHISA |
| description | PROBLEM TO BE SOLVED: To provide a production method of a high-quality group III nitride crystal.SOLUTION: A group III nitride substrate has a base plate of a group III nitride including a front surface and a rear surface each having a different Mg concentration. A high-quality group III nitride crystal is produced by providing the above group III nitride substrate.SELECTED DRAWING: Figure 1
【課題】本開示は、高品質なＩＩＩ族窒化物結晶を製造する方法を提供することを課題とする。【解決手段】表面と裏面とを有するＩＩＩ族窒化物の基材部を備え、前記表面と前記裏面とのＭｇ濃度が異なる、ＩＩＩ族窒化物基板を解決手段とする。表面と裏面とを有するＩＩＩ族窒化物の基材部を備え、前記表面と前記裏面とのＭｇ濃度が異なる、ＩＩＩ族窒化物基板を解決手段とすることで、上記の課題を解決できる。上記の課題とは、すなわち、高品質なＩＩＩ族窒化物結晶を製造する方法を提供することである。この課題を、解決するために、表面と裏面とを有するＩＩＩ族窒化物の基材部を備え、前記表面と前記裏面とのＭｇ濃度が異なる、ＩＩＩ族窒化物基板を提供する。【選択図】図１ |
| format | Patent |
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【課題】本開示は、高品質なＩＩＩ族窒化物結晶を製造する方法を提供することを課題とする。【解決手段】表面と裏面とを有するＩＩＩ族窒化物の基材部を備え、前記表面と前記裏面とのＭｇ濃度が異なる、ＩＩＩ族窒化物基板を解決手段とする。表面と裏面とを有するＩＩＩ族窒化物の基材部を備え、前記表面と前記裏面とのＭｇ濃度が異なる、ＩＩＩ族窒化物基板を解決手段とすることで、上記の課題を解決できる。上記の課題とは、すなわち、高品質なＩＩＩ族窒化物結晶を製造する方法を提供することである。この課題を、解決するために、表面と裏面とを有するＩＩＩ族窒化物の基材部を備え、前記表面と前記裏面とのＭｇ濃度が異なる、ＩＩＩ族窒化物基板を提供する。【選択図】図１</description><language>eng ; jpn</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171005&DB=EPODOC&CC=JP&NR=2017178765A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171005&DB=EPODOC&CC=JP&NR=2017178765A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OKAYAMA YOSHIHISA</creatorcontrib><title>GROUP III NITRIDE SUBSTRATE, AND PRODUCTION METHOD OF GROUP III NITRIDE CRYSTAL</title><description>PROBLEM TO BE SOLVED: To provide a production method of a high-quality group III nitride crystal.SOLUTION: A group III nitride substrate has a base plate of a group III nitride including a front surface and a rear surface each having a different Mg concentration. A high-quality group III nitride crystal is produced by providing the above group III nitride substrate.SELECTED DRAWING: Figure 1
【課題】本開示は、高品質なＩＩＩ族窒化物結晶を製造する方法を提供することを課題とする。【解決手段】表面と裏面とを有するＩＩＩ族窒化物の基材部を備え、前記表面と前記裏面とのＭｇ濃度が異なる、ＩＩＩ族窒化物基板を解決手段とする。表面と裏面とを有するＩＩＩ族窒化物の基材部を備え、前記表面と前記裏面とのＭｇ濃度が異なる、ＩＩＩ族窒化物基板を解決手段とすることで、上記の課題を解決できる。上記の課題とは、すなわち、高品質なＩＩＩ族窒化物結晶を製造する方法を提供することである。この課題を、解決するために、表面と裏面とを有するＩＩＩ族窒化物の基材部を備え、前記表面と前記裏面とのＭｇ濃度が異なる、ＩＩＩ族窒化物基板を提供する。【選択図】図１</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPB3D_IPDVDw9PRU8PMMCfJ0cVUIDnUKDglyDHHVUXD0c1EICPJ3CXUO8fT3U_B1DfHwd1Hwd1PA1OUcFBkc4ujDw8CalphTnMoLpbkZlNxcQ5w9dFML8uNTiwsSk1PzUkvivQKMDAzNDc0tzM1MHY2JUgQAoQ4vSw</recordid><startdate>20171005</startdate><enddate>20171005</enddate><creator>OKAYAMA YOSHIHISA</creator><scope>EVB</scope></search><sort><creationdate>20171005</creationdate><title>GROUP III NITRIDE SUBSTRATE, AND PRODUCTION METHOD OF GROUP III NITRIDE CRYSTAL</title><author>OKAYAMA YOSHIHISA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2017178765A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2017</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>OKAYAMA YOSHIHISA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OKAYAMA YOSHIHISA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GROUP III NITRIDE SUBSTRATE, AND PRODUCTION METHOD OF GROUP III NITRIDE CRYSTAL</title><date>2017-10-05</date><risdate>2017</risdate><abstract>PROBLEM TO BE SOLVED: To provide a production method of a high-quality group III nitride crystal.SOLUTION: A group III nitride substrate has a base plate of a group III nitride including a front surface and a rear surface each having a different Mg concentration. A high-quality group III nitride crystal is produced by providing the above group III nitride substrate.SELECTED DRAWING: Figure 1
【課題】本開示は、高品質なＩＩＩ族窒化物結晶を製造する方法を提供することを課題とする。【解決手段】表面と裏面とを有するＩＩＩ族窒化物の基材部を備え、前記表面と前記裏面とのＭｇ濃度が異なる、ＩＩＩ族窒化物基板を解決手段とする。表面と裏面とを有するＩＩＩ族窒化物の基材部を備え、前記表面と前記裏面とのＭｇ濃度が異なる、ＩＩＩ族窒化物基板を解決手段とすることで、上記の課題を解決できる。上記の課題とは、すなわち、高品質なＩＩＩ族窒化物結晶を製造する方法を提供することである。この課題を、解決するために、表面と裏面とを有するＩＩＩ族窒化物の基材部を備え、前記表面と前記裏面とのＭｇ濃度が異なる、ＩＩＩ族窒化物基板を提供する。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | GROUP III NITRIDE SUBSTRATE, AND PRODUCTION METHOD OF GROUP III NITRIDE CRYSTAL |
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