GROUP III NITRIDE SUBSTRATE, AND PRODUCTION METHOD OF GROUP III NITRIDE CRYSTAL

PROBLEM TO BE SOLVED: To provide a production method of a high-quality group III nitride crystal.SOLUTION: A group III nitride substrate has a base plate of a group III nitride including a front surface and a rear surface each having a different Mg concentration. A high-quality group III nitride cry...

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1. Verfasser:	OKAYAMA YOSHIHISA
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a production method of a high-quality group III nitride crystal.SOLUTION: A group III nitride substrate has a base plate of a group III nitride including a front surface and a rear surface each having a different Mg concentration. A high-quality group III nitride crystal is produced by providing the above group III nitride substrate.SELECTED DRAWING: Figure 1 【課題】本開示は、高品質なＩＩＩ族窒化物結晶を製造する方法を提供することを課題とする。【解決手段】表面と裏面とを有するＩＩＩ族窒化物の基材部を備え、前記表面と前記裏面とのＭｇ濃度が異なる、ＩＩＩ族窒化物基板を解決手段とする。表面と裏面とを有するＩＩＩ族窒化物の基材部を備え、前記表面と前記裏面とのＭｇ濃度が異なる、ＩＩＩ族窒化物基板を解決手段とすることで、上記の課題を解決できる。上記の課題とは、すなわち、高品質なＩＩＩ族窒化物結晶を製造する方法を提供することである。この課題を、解決するために、表面と裏面とを有するＩＩＩ族窒化物の基材部を備え、前記表面と前記裏面とのＭｇ濃度が異なる、ＩＩＩ族窒化物基板を提供する。【選択図】図１