METHOD FOR PRODUCING CONDUCTIVE MATERIAL COMPRISING CRYSTALLINE CARBON NANO MATERIAL, CONDUCTIVE MATERIAL, TRANSPARENT ELECTRODE, ELECTRODE, WIRE, ELECTRONIC DEVICE, AND SEMICONDUCTOR DEVICE

METHOD FOR PRODUCING CONDUCTIVE MATERIAL COMPRISING CRYSTALLINE CARBON NANO MATERIAL, CONDUCTIVE MATERIAL, TRANSPARENT ELECTRODE, ELECTRODE, WIRE, ELECTRONIC DEVICE, AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for producing a conductive material that allows a conductive material comprising a crystalline carbon nano material to be produced directly at a target place, at a low temperature of 430°C or less.SOLUTION: The method includes a forming step for forming a gr...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: GOLAP KALITA, TANEMURA MASAYUKI, MOHAMAD SAUFI BIN ROSMI, RATNESHKUMAR RITESHKUMAR VISHWAKARMA, YAZID BIN YAAKOB
Format: Patent
Sprache:eng ; jpn
Schlagworte:
BASIC ELECTRIC ELEMENTS
CABLES
CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY
CONDUCTORS
ELECTRICITY
INSULATORS
PERFORMING OPERATIONS
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES
THEIR RELEVANT APPARATUS
TRANSPORTING
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for producing a conductive material that allows a conductive material comprising a crystalline carbon nano material to be produced directly at a target place, at a low temperature of 430°C or less.SOLUTION: The method includes a forming step for forming a graphene film 26 by heating a catalyst metal film 22 and a carbon raw material film 24 at a temperature of 430°C or less. At that time, as a catalyst metal material constituting the catalyst metal film 22, used is one comprising at least one of Zn, Sn, Bi, Pb, Tl, Cs, In, Cd, Rb, Ga, K, Na, Li, and Se, which is a metal element group with a melting point temperature of 430°C or less.SELECTED DRAWING: Figure 3A 【課題】結晶性炭素ナノ材料を含む導電性材料を、４３０℃以下の低温で、目的とする場所に直接製造できる導電性材料の製造方法を提供する。【解決手段】触媒金属膜２２と炭素原料膜２４とを、４３０℃以下の温度で加熱して、グラフェン膜２６を形成する形成工程を行う。このとき、触媒金属膜２２を構成する触媒金属材料として、融点温度が４３０℃以下の金属元素群である、Ｚｎ、Ｓｎ、Ｂｉ、Ｐｂ、Ｔｌ、Ｃｓ、Ｉｎ、Ｃｄ、Ｒｂ、Ｇａ、Ｋ、Ｎａ、Ｌｉ、Ｓｅのいずれか１つ以上を含むものを用いる。【選択図】図３Ａ