SOLID-STATE IMAGING DEVICE AND ELECTRONIC EQUIPMENT

PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of maintaining transistor characteristics of a transfer transistor even when pixels are miniaturized, and of sufficiently securing a light-receiving area of a photoelectric conversion element.SOLUTION: A solid-state imaging device is configured so that a plurality of pixels, each consisting of a photoelectric conversion element and a pixel transistor, are arranged, and so that each transfer gate has four sides of a first side, a second side, a third side, and a fourth side. The first side is formed so as to face a floating diffusion region. The second side is formed so as to face the photoelectric conversion element. The first side is formed to be the shortest of the four sides. The second side is formed to be the longest of the four sides.SELECTED DRAWING: Figure 2 【課題】画素が微細化されても、転送トランジスタのトランジスタ特性を維持し、かつ光電変換素子の受光面積を十分に確保できる固体撮像装置を提供する。【解決手段】光電変換素子と画素トランジスタからなる画素が複数配列され、転送ゲートそれぞれ第１の辺、第２の辺、第３の辺、及び、第４の辺の４つの辺を有し、第１の辺はフローティングディフュージョン領域に面して形成され、第２の辺は光電変換素子に面して形成され、第１の辺は４つの辺の中で最も短く形成され、第２の辺は、４つの辺の中で最も長く形成された固体撮像装置を構成する。【選択図】図２