ETCHING METHOD, PRODUCTION METHODS OF ARTICLE AND SEMICONDUCTOR DEVICE, AND ETCHANT

PROBLEM TO BE SOLVED: To provide an etching technique which enables an anisotropic working.SOLUTION: An etching method according to an embodiment comprises the step of bringing a semiconductor with a noble metal catalyst formed thereon into contact with an etchant 40 containing a hydrofluoric acid,...

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Bibliographische Detailangaben

1. Verfasser:	ASANO YUSAKU
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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