ETCHING METHOD, PRODUCTION METHODS OF ARTICLE AND SEMICONDUCTOR DEVICE, AND ETCHANT

PROBLEM TO BE SOLVED: To provide an etching technique which enables an anisotropic working.SOLUTION: An etching method according to an embodiment comprises the step of bringing a semiconductor with a noble metal catalyst formed thereon into contact with an etchant 40 containing a hydrofluoric acid,...

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1. Verfasser:	ASANO YUSAKU
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an etching technique which enables an anisotropic working.SOLUTION: An etching method according to an embodiment comprises the step of bringing a semiconductor with a noble metal catalyst formed thereon into contact with an etchant 40 containing a hydrofluoric acid, an oxidizing agent and an organic additive agent 41 to removing a part of the semiconductor, which is in contact with the catalyst. The organic additive agent 41 is one or more compounds selected from a group consisting of polyethylene glycol, succinic acid, malic acid, dipropylamine, and alanine.SELECTED DRAWING: Figure 4 【課題】異方性加工が可能なエッチング技術を提供する。【解決手段】実施形態のエッチング方法は、貴金属からなる触媒が形成された半導体を、フッ化水素酸と酸化剤と有機添加剤４１とを含んだエッチング液４０に接触させて、前記半導体のうち前記触媒と接している部分を除去することを含み、前記有機添加剤４１は、ポリエチレングリコール、コハク酸、リンゴ酸、ジプロピルアミン、及びアラニンからなる群より選ばれる１以上の化合物である。【選択図】図４