METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING WAFER FOR SEMICONDUCTOR LIGHT-EMITTING ELEMENT

PROBLEM TO BE SOLVED: To manufacture a light-emitting element having a semiconductor layer with high crystal quality by a simple method.SOLUTION: A method of manufacturing a wafer for a semiconductor light-emitting element comprises: a step (a) of preparing a growth substrate; a step (b) of forming...

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1. Verfasser: TSUKIHARA MASASHI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To manufacture a light-emitting element having a semiconductor layer with high crystal quality by a simple method.SOLUTION: A method of manufacturing a wafer for a semiconductor light-emitting element comprises: a step (a) of preparing a growth substrate; a step (b) of forming a semiconductor layer on an upper layer of the growth substrate; a step (c) of irradiating the semiconductor layer with excitation light; a step (d) of receiving fluorescence radiated from the semiconductor layer during execution of the step (c); and a step (e) of performing quality determination of the semiconductor layer on the basis of the light output of the fluorescence received in the step (d).SELECTED DRAWING: Figure 3H 【課題】結晶品質の高い半導体層を有する発光素子を、簡易な方法で製造する。【解決手段】 半導体発光素子用ウェハの製造方法であって、成長基板を準備する工程(a)と、成長基板の上層に半導体層を形成する工程(b)と、半導体層に対して励起光を照射する工程(c)と、工程(c)の実行時に半導体層から放射される蛍光を受光する工程(d)と、工程(d)において受光される蛍光の光出力に基づいて半導体層の良否判定を行う工程(e)とを有する。【選択図】 図3H