NICKEL PLATING FILM AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a high corrosion resistant Ni plating film by making it possible to apply a potential difference pattern of various Ni plating films more simply than ever.SOLUTION: In a manufacturing method of a Ni plating film including a Ni plating layer of at least one layer, by...

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Bibliographische Detailangaben
Hauptverfasser: YOSHIDA JUNJI, MORIMOTO KENJIRO
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a high corrosion resistant Ni plating film by making it possible to apply a potential difference pattern of various Ni plating films more simply than ever.SOLUTION: In a manufacturing method of a Ni plating film including a Ni plating layer of at least one layer, by changing a stirring strength of a plating bath in the intermediate of electroplating of the Ni plating layer, a potential of the Ni plating layer to be formed is varied in the plating depth direction. In the Ni plating film including a D-Ni plating layer and a B-Ni plating layer in contact therewith, other than an interface voltage change region in an interface with the D-Ni plating layer and the B-Ni plating layer, there is an inner layer voltage change region where a potential in the layer of the D-Ni plating layer or the B-Ni plating layer changes at an average change rate of 1 mV/0.1 μm or larger in the plating depth direction.SELECTED DRAWING: Figure 5 【課題】従来よりも簡便に、多様なNiめっき皮膜の電位差パターンを付けることができるようにし、高耐食性のNiめっき皮膜を提供する。【解決手段】少なくとも1層のNiめっき層を含むNiめっき皮膜の製造方法において、前記Niめっき層の電解めっきの途中でめっき浴の攪拌強度を変更することにより、形成される前記Niめっき層の電位をめっき深さ方向に変化させる。D−Niめっき層とそれに接するB−Niめっき層とを含むNiめっき皮膜において、前記D−Niめっき層とB−Niめっき層との界面における界面電圧変化域以外に、D−Niめっき層又はB−Niめっき層の層内における電位がめっき深さ方向に平均変化率1mV/0.1μm以上で変化する層内電圧変化域がある。【選択図】図5