SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves improved resin adhesion between an insulation resin layer and a mold resin and high reliability.SOLUTION: A semiconductor device of the present embodiment comprises: a lead frame composed of die pads and external terminals; an in...
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Format: | Patent |
Sprache: | eng ; jpn |
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Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves improved resin adhesion between an insulation resin layer and a mold resin and high reliability.SOLUTION: A semiconductor device of the present embodiment comprises: a lead frame composed of die pads and external terminals; an insulation resin layer arranged on an undersurface of the lead frame; a heat sink arranged on an undersurface of the insulation resin layer; and a mold resin for resin encapsulating a part of the lead frame, the insulation resin layer and a part of the heat sink, in which a porous surface is formed on a surface of the insulation resin layer and the mold resin to be joined enters pores of the insulation resin layer. And a grain size of a filler mixed with epoxy resin of the insulation resin layer is smaller than a grain size of a filler mixed with epoxy resin of the mold resin.SELECTED DRAWING: Figure 1
【課題】絶縁樹脂層とモールド樹脂との樹脂密着性を向上させた高信頼性の半導体装置を提供すること。【解決手段】本発明の半導体装置は、ダイパッドおよび外部端子からなるリードフレームと、リードフレームの下面に配置された絶縁樹脂層と、絶縁樹脂層の下面に配置された放熱板と、リードフレームの一部と、絶縁樹脂層と、放熱板の一部を樹脂封止するモールド樹脂を備え、絶縁樹脂層の表面には多孔質表面が形成され、接合するモールド樹脂が絶縁樹脂層の多孔質に入り込んでいる。また、絶縁樹脂層のエポキシ樹脂に混練されたフィラーの粒径は、モールド樹脂のエポキシ樹脂に混練されたフィラー粒径より小さいことを特徴とする。【選択図】図1 |
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