SEMICONDUCTOR LIGHT-EMITTING ELEMENT
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of improving reliability.SOLUTION: According to an embodiment, a semiconductor light-emitting element comprises a substrate, first to third semiconductor layers, first and second electrodes, a first metal layer, and an i...
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Sprache: | eng ; jpn |
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Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of improving reliability.SOLUTION: According to an embodiment, a semiconductor light-emitting element comprises a substrate, first to third semiconductor layers, first and second electrodes, a first metal layer, and an insulating layer. The second semiconductor layer is provided between the substrate and a part of the first semiconductor layer. The third semiconductor layer is provided between the second semiconductor layer and the part. The first electrode is provided between the substrate and another part of the first semiconductor layer, and electrically connected with the first semiconductor layer. The second electrode is provided between the substrate and the second semiconductor layer, and electrically connected with the second semiconductor layer. The first metal layer is provided between the substrate and the first electrode and between the substrate and the second electrode, and contacted with one of the first electrode and the second electrode, and contains titanium. The insulating layer is provided between the other of the first electrode and the second electrode and the first metal layer, and insulates between the first semiconductor layer and the first metal layer and between the other of the first electrode and the second electrode and the first metal layer.SELECTED DRAWING: Figure 1
【課題】信頼性を向上できる半導体発光素子を提供する。【解決手段】実施形態によれば、基体と、第1〜第3半導体層と、第1、第2電極と、第1金属層と、絶縁層と、を含む。第2半導体層は、基体と第1半導体層の一部との間に設けられる。第3半導体層は、第2半導体層と一部との間に設けられる。第1電極は、基体と第1半導体層の別の一部との間に設けられ第1半導体層と電気的に接続される。第2電極は、基体と第2半導体層との間に設けられ第2半導体層と電気的に接続される。第1金属層は、基体と第1電極との間、及び、基体と第2電極との間に設けられ、第1電極及び第2電極の一方と接し、チタンを含む。絶縁層は、第1電極及び第2電極の他方と第1金属層との間に設けられ、第1半導体層と第1金属層との間、及び、第1電極及び第2電極の他方と第1金属層との間を絶縁する。【選択図】図1 |
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