HIGH-DENSITY INTEGRATED CIRCUIT PACKAGE STRUCTURE AND INTEGRATED CIRCUIT
PROBLEM TO BE SOLVED: To provide a high-density integrated circuit package structure and an integrated circuit.SOLUTION: A high-density integrated circuit package structure includes a rectangular parallelepiped plastic package structure in which a metal lead frame, a chip, and a micron connection wi...
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Format: | Patent |
Sprache: | eng ; jpn |
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Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a high-density integrated circuit package structure and an integrated circuit.SOLUTION: A high-density integrated circuit package structure includes a rectangular parallelepiped plastic package structure in which a metal lead frame, a chip, and a micron connection wire are sealed tightly. The length A1 of the plastic package structure satisfies a relationship of 1.20 mm+(B-8)×0.3 mm/2≤A1≤4.50 mm+(B-8)×1.00 mm/2, where B represents the number of outer leads, the width A2 of the plastic package structure satisfies a relationship of 1.20 mm≤A2≤3.50 mm, and the thickness A3 of the plastic package structure satisfies a relationship of A3≥0.35 mm. The package structure of the present invention satisfies requirements of portable products that are low in power consumption, high in speed, high in capacity and small in volume, in response to a request for the development of a chip manufacturing technology from a micron order to a submicron order and a nanometer order.SELECTED DRAWING: Figure 1
【課題】高密度集積回路パッケージ構造及び集積回路を提供する。【解決手段】高密度集積回路パッケージ構造は、金属リードフレーム、チップ及びミクロン接続ワイヤを密封する直方体プラスチックパッケージ構造を含み、前記プラスチックパッケージ構造の長さA1は、1.20 mm+(B−8 )×0.3mm/2≦A1≦4.50mm+(B−8)×1.00 mm/2の関係を満足し、プラスチックパッケージ構造の幅A2は、1.20mm≦A2≦3.50mmの関係を満足し、プラスチックパッケージ構造の厚さA3は、A3≧0.35mmの関係を満足し、Bは、アウターリードの個数である。 本発明のパッケージ構造は、チップ製造技術をミクロンオーダーからサブミクロンオーダー、ナノメートルオーダーの発展の要求に応じ、低電力消耗、高速、大容量、小体積の可携帯式製品の要求を満足する。【選択図】図1 |
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