MAGNETORESISTANCE EFFECT ELEMENT AND METHOD FOR MANUFACTURING THE SAME
PROBLEM TO BE SOLVED: To improve manufacturing efficiency of a magnetoresistance effect element.SOLUTION: A method of manufacturing a magnetoresistance effect element according to one embodiment includes the steps of: sequentially laminating a first ferromagnetic layer, a non-magnetic layer, and a s...
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| creator | MAEKAWA HIROAKI SEDO SATOSHI AMANO MINORU |
| description | PROBLEM TO BE SOLVED: To improve manufacturing efficiency of a magnetoresistance effect element.SOLUTION: A method of manufacturing a magnetoresistance effect element according to one embodiment includes the steps of: sequentially laminating a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer; forming a resist having a first surface opposed to the second ferromagnetic layer and a second surface located at an opposite side to the first surface, and forming a hole surrounded by the resist; embedding a first film in the hole; removing the resist; forming a second film so that at least a lateral face of the first film is covered with the second film; and etching the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer laminated by using the first film and the second film as masks.SELECTED DRAWING: Figure 8
【課題】本発明の実施形態は、磁気抵抗効果素子の製造効率を向上させる。【解決手段】実施形態の磁気抵抗効果素子の製造方法は、第１の強磁性層と、非磁性層と、第２の強磁性層と、を順に積層する工程と、前記第２の強磁性層と対向した第１面と、当該第１面とは反対側に位置した第２面と、を有したレジストを形成し、当該レジストによって囲まれたホールを形成する工程と、前記ホールに、第１の膜を埋め込む工程と、前記レジストを除去する工程と、前記第１の膜の少なくとも側面が、第２の膜により覆われるように当該第２の膜を成膜する工程と、前記第１の膜及び前記第２の膜をマスクとして、積層された前記第１の強磁性層と、前記非磁性層と、前記第２の強磁性層と、をエッチングする工程と、を具備する。【選択図】図８ |
| format | Patent |
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【課題】本発明の実施形態は、磁気抵抗効果素子の製造効率を向上させる。【解決手段】実施形態の磁気抵抗効果素子の製造方法は、第１の強磁性層と、非磁性層と、第２の強磁性層と、を順に積層する工程と、前記第２の強磁性層と対向した第１面と、当該第１面とは反対側に位置した第２面と、を有したレジストを形成し、当該レジストによって囲まれたホールを形成する工程と、前記ホールに、第１の膜を埋め込む工程と、前記レジストを除去する工程と、前記第１の膜の少なくとも側面が、第２の膜により覆われるように当該第２の膜を成膜する工程と、前記第１の膜及び前記第２の膜をマスクとして、積層された前記第１の強磁性層と、前記非磁性層と、前記第２の強磁性層と、をエッチングする工程と、を具備する。【選択図】図８</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170720&DB=EPODOC&CC=JP&NR=2017126613A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170720&DB=EPODOC&CC=JP&NR=2017126613A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MAEKAWA HIROAKI</creatorcontrib><creatorcontrib>SEDO SATOSHI</creatorcontrib><creatorcontrib>AMANO MINORU</creatorcontrib><title>MAGNETORESISTANCE EFFECT ELEMENT AND METHOD FOR MANUFACTURING THE SAME</title><description>PROBLEM TO BE SOLVED: To improve manufacturing efficiency of a magnetoresistance effect element.SOLUTION: A method of manufacturing a magnetoresistance effect element according to one embodiment includes the steps of: sequentially laminating a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer; forming a resist having a first surface opposed to the second ferromagnetic layer and a second surface located at an opposite side to the first surface, and forming a hole surrounded by the resist; embedding a first film in the hole; removing the resist; forming a second film so that at least a lateral face of the first film is covered with the second film; and etching the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer laminated by using the first film and the second film as masks.SELECTED DRAWING: Figure 8
【課題】本発明の実施形態は、磁気抵抗効果素子の製造効率を向上させる。【解決手段】実施形態の磁気抵抗効果素子の製造方法は、第１の強磁性層と、非磁性層と、第２の強磁性層と、を順に積層する工程と、前記第２の強磁性層と対向した第１面と、当該第１面とは反対側に位置した第２面と、を有したレジストを形成し、当該レジストによって囲まれたホールを形成する工程と、前記ホールに、第１の膜を埋め込む工程と、前記レジストを除去する工程と、前記第１の膜の少なくとも側面が、第２の膜により覆われるように当該第２の膜を成膜する工程と、前記第１の膜及び前記第２の膜をマスクとして、積層された前記第１の強磁性層と、前記非磁性層と、前記第２の強磁性層と、をエッチングする工程と、を具備する。【選択図】図８</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQANAsDqL-w9FdMC3U-Ujvmoq5SHKdS5E4iRbq_-PiBzi95W0NB-yFNCbKQ1YUR0DM5BToSoFEAaWDQOpjBxwTBJSR0emYBulBPUHGQHuzeczPtRx-7kzFpM4fy_KeyrrM9_Iqn-lyq0_2bOu2tQ02f6UvAmcspA</recordid><startdate>20170720</startdate><enddate>20170720</enddate><creator>MAEKAWA HIROAKI</creator><creator>SEDO SATOSHI</creator><creator>AMANO MINORU</creator><scope>EVB</scope></search><sort><creationdate>20170720</creationdate><title>MAGNETORESISTANCE EFFECT ELEMENT AND METHOD FOR MANUFACTURING THE SAME</title><author>MAEKAWA HIROAKI ; SEDO SATOSHI ; AMANO MINORU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2017126613A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MAEKAWA HIROAKI</creatorcontrib><creatorcontrib>SEDO SATOSHI</creatorcontrib><creatorcontrib>AMANO MINORU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MAEKAWA HIROAKI</au><au>SEDO SATOSHI</au><au>AMANO MINORU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MAGNETORESISTANCE EFFECT ELEMENT AND METHOD FOR MANUFACTURING THE SAME</title><date>2017-07-20</date><risdate>2017</risdate><abstract>PROBLEM TO BE SOLVED: To improve manufacturing efficiency of a magnetoresistance effect element.SOLUTION: A method of manufacturing a magnetoresistance effect element according to one embodiment includes the steps of: sequentially laminating a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer; forming a resist having a first surface opposed to the second ferromagnetic layer and a second surface located at an opposite side to the first surface, and forming a hole surrounded by the resist; embedding a first film in the hole; removing the resist; forming a second film so that at least a lateral face of the first film is covered with the second film; and etching the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer laminated by using the first film and the second film as masks.SELECTED DRAWING: Figure 8
【課題】本発明の実施形態は、磁気抵抗効果素子の製造効率を向上させる。【解決手段】実施形態の磁気抵抗効果素子の製造方法は、第１の強磁性層と、非磁性層と、第２の強磁性層と、を順に積層する工程と、前記第２の強磁性層と対向した第１面と、当該第１面とは反対側に位置した第２面と、を有したレジストを形成し、当該レジストによって囲まれたホールを形成する工程と、前記ホールに、第１の膜を埋め込む工程と、前記レジストを除去する工程と、前記第１の膜の少なくとも側面が、第２の膜により覆われるように当該第２の膜を成膜する工程と、前記第１の膜及び前記第２の膜をマスクとして、積層された前記第１の強磁性層と、前記非磁性層と、前記第２の強磁性層と、をエッチングする工程と、を具備する。【選択図】図８</abstract><oa>free_for_read</oa></addata></record> |
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| title | MAGNETORESISTANCE EFFECT ELEMENT AND METHOD FOR MANUFACTURING THE SAME |
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