HYDROGEN PLASMA PROCESSING DEVICE AND HYDROGEN PLASMA PROCESSING METHOD

PROBLEM TO BE SOLVED: To provide: a hydrogen plasma processing device having a substrate-transporting arrangement which contributes to the increase in production efficiency; and a hydrogen plasma processing method.SOLUTION: A hydrogen plasma processing device 10 comprises: an atmospheric pressure pr...

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Bibliographische Detailangaben
Hauptverfasser: ITO SEISHI, TAKAI SHIGEKI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide: a hydrogen plasma processing device having a substrate-transporting arrangement which contributes to the increase in production efficiency; and a hydrogen plasma processing method.SOLUTION: A hydrogen plasma processing device 10 comprises: an atmospheric pressure process chamber 12; a plasma head 14 set in the atmospheric pressure process chamber 12, and serving to generate a line form of hydrogen-containing plasma P; and a transporting part 16 set in the atmospheric pressure process chamber 12, and serving to transport a disc-like substrate in a thickness direction of the plasma with respect to the plasma head 14, provided that the disc-like substrate has a substrate diameter longer than a thickness of the plasma and shorter than a width of the plasma. The transporting part 16 includes a round heating region for holding and heating the disc-like substrate, which has a shape corresponding to that of the disc-like substrate.SELECTED DRAWING: Figure 1 【課題】製造効率の向上に資する基板搬送構成を有する水素プラズマ処理装置および水素プラズマ処理方法を提供する。【解決手段】水素プラズマ処理装置10は、大気圧処理室12と、大気圧処理室12に設置され、ライン状の水素含有プラズマPを生成するプラズマヘッド14と、大気圧処理室12に設置され、プラズマの厚みより長くプラズマの幅より短い基板径を有する円形状基板をプラズマヘッド14に対しプラズマの厚み方向に搬送する搬送部16と、を備える。搬送部16は、円形状基板に相当する形状を有しかつ円形状基板を保持し加熱する円形状加温領域を備える。【選択図】図1