SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same which can keep contact resistance of a surface electrode against a semiconductor layer as low as possible and prevent the semiconductor layer from being damaged by a medical agent for pretreatment of electroless plating for a plating layer of the surface electrode at the time of the electroless plating.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming on a surface 6 of a semiconductor layer 2, a first Al-based electrode 101 so as to be connected to a p-type region 5; forming a barrier metal 102 on the first Al-based electrode 101; forming a second Al-based electrode 103 on the barrier metal 102; and subsequently, forming a plating layer 104 on the second Al-based electrode 103 by electroless plating.SELECTED DRAWING: Figure 3 【課題】半導体層に対する表面電極のコンタクト抵抗を低く抑えることができ、かつ、表面電極のめっき層のための無電解めっき時に、当該無電解めっきの前処理用の薬剤で半導体層がダメージを受けることを防止できる半導体装置およびその製造方法を提供する。【解決手段】半導体層２の表面６に、ｐ型領域５に接続されるように第１Ａｌ系電極１０１を形成し、第１Ａｌ系電極１０１上にバリアメタル１０２を形成する。次に、バリアメタル１０２上に第２Ａｌ系電極１０３を形成する。次に、無電解めっきによって、第２Ａｌ系電極１０３上にめっき層１０４を形成する。【選択図】図３