LAMINATE
PROBLEM TO BE SOLVED: To provide a semiconductor element having a large reverse withstand voltage and a low forward on-resistance, and capable of extracting a large current, and to provide a laminate for use therein.SOLUTION: A laminate includes at least a conductive substrate 10, a Schottky electro...
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| creator | TOMAI SHIGEKAZU TSURUMA YUKI TAKESHIMA MOTOHIRO KAWASHIMA EMI KAMIOKA YOSHIHIRO SEKIYA TAKASHI |
| description | PROBLEM TO BE SOLVED: To provide a semiconductor element having a large reverse withstand voltage and a low forward on-resistance, and capable of extracting a large current, and to provide a laminate for use therein.SOLUTION: A laminate includes at least a conductive substrate 10, a Schottky electrode layer 20, and a metal oxide semiconductor layer 30, in this order. The metal oxide semiconductor layer 30 is a laminate consisting of a laminated structure of more than one layer, one layer composing the metal oxide semiconductor layer 30 is a withstand voltage layer 32 in contact with the Schottky electrode layer 20, another layer is a bulk layer 34 in contact with the withstand voltage layer 32. The average value Nd1 of donor concentration in the withstand voltage layer 32 in the film thickness direction, and the average value Nd2 of donor concentration in the bulk layer 34 in the film thickness direction satisfy a relation Nd1 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2017118048A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2017118048A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2017118048A3</originalsourceid><addsrcrecordid>eNrjZODwcfT19HMMceVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhuaGhhYGJhaOxkQpAgBTwxuu</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>LAMINATE</title><source>esp@cenet</source><creator>TOMAI SHIGEKAZU ; TSURUMA YUKI ; TAKESHIMA MOTOHIRO ; KAWASHIMA EMI ; KAMIOKA YOSHIHIRO ; SEKIYA TAKASHI</creator><creatorcontrib>TOMAI SHIGEKAZU ; TSURUMA YUKI ; TAKESHIMA MOTOHIRO ; KAWASHIMA EMI ; KAMIOKA YOSHIHIRO ; SEKIYA TAKASHI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a semiconductor element having a large reverse withstand voltage and a low forward on-resistance, and capable of extracting a large current, and to provide a laminate for use therein.SOLUTION: A laminate includes at least a conductive substrate 10, a Schottky electrode layer 20, and a metal oxide semiconductor layer 30, in this order. The metal oxide semiconductor layer 30 is a laminate consisting of a laminated structure of more than one layer, one layer composing the metal oxide semiconductor layer 30 is a withstand voltage layer 32 in contact with the Schottky electrode layer 20, another layer is a bulk layer 34 in contact with the withstand voltage layer 32. The average value Nd1 of donor concentration in the withstand voltage layer 32 in the film thickness direction, and the average value Nd2 of donor concentration in the bulk layer 34 in the film thickness direction satisfy a relation Nd1<Nd2.SELECTED DRAWING: Figure 1
【課題】逆方向耐電圧が大きく、かつ順方向オン抵抗が低く、大電流を取り出すことができる半導体素子、及びそれに用いられる積層体を提供する。【解決手段】積層体は、少なくとも導電性基板１０、ショットキー電極層２０、金属酸化物半導体層３０をこの順に含み、金属酸化物半導体層３０が２層以上の積層構造からなる積層体であって、金属酸化物半導体層３０を構成する層のうちの１層はショットキー電極層２０と接する耐圧層３２であり、他の１層は耐圧層３２と接するバルク層３４であり、耐圧層内３２のドナー濃度の膜厚方向の平均値Ｎｄ１及びバルク層内３４のドナー濃度の膜厚方向の平均値Ｎｄ２が、Ｎｄ１＜Ｎｄ２を満たす。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170629&DB=EPODOC&CC=JP&NR=2017118048A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170629&DB=EPODOC&CC=JP&NR=2017118048A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TOMAI SHIGEKAZU</creatorcontrib><creatorcontrib>TSURUMA YUKI</creatorcontrib><creatorcontrib>TAKESHIMA MOTOHIRO</creatorcontrib><creatorcontrib>KAWASHIMA EMI</creatorcontrib><creatorcontrib>KAMIOKA YOSHIHIRO</creatorcontrib><creatorcontrib>SEKIYA TAKASHI</creatorcontrib><title>LAMINATE</title><description>PROBLEM TO BE SOLVED: To provide a semiconductor element having a large reverse withstand voltage and a low forward on-resistance, and capable of extracting a large current, and to provide a laminate for use therein.SOLUTION: A laminate includes at least a conductive substrate 10, a Schottky electrode layer 20, and a metal oxide semiconductor layer 30, in this order. The metal oxide semiconductor layer 30 is a laminate consisting of a laminated structure of more than one layer, one layer composing the metal oxide semiconductor layer 30 is a withstand voltage layer 32 in contact with the Schottky electrode layer 20, another layer is a bulk layer 34 in contact with the withstand voltage layer 32. The average value Nd1 of donor concentration in the withstand voltage layer 32 in the film thickness direction, and the average value Nd2 of donor concentration in the bulk layer 34 in the film thickness direction satisfy a relation Nd1<Nd2.SELECTED DRAWING: Figure 1
【課題】逆方向耐電圧が大きく、かつ順方向オン抵抗が低く、大電流を取り出すことができる半導体素子、及びそれに用いられる積層体を提供する。【解決手段】積層体は、少なくとも導電性基板１０、ショットキー電極層２０、金属酸化物半導体層３０をこの順に含み、金属酸化物半導体層３０が２層以上の積層構造からなる積層体であって、金属酸化物半導体層３０を構成する層のうちの１層はショットキー電極層２０と接する耐圧層３２であり、他の１層は耐圧層３２と接するバルク層３４であり、耐圧層内３２のドナー濃度の膜厚方向の平均値Ｎｄ１及びバルク層内３４のドナー濃度の膜厚方向の平均値Ｎｄ２が、Ｎｄ１＜Ｎｄ２を満たす。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZODwcfT19HMMceVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhuaGhhYGJhaOxkQpAgBTwxuu</recordid><startdate>20170629</startdate><enddate>20170629</enddate><creator>TOMAI SHIGEKAZU</creator><creator>TSURUMA YUKI</creator><creator>TAKESHIMA MOTOHIRO</creator><creator>KAWASHIMA EMI</creator><creator>KAMIOKA YOSHIHIRO</creator><creator>SEKIYA TAKASHI</creator><scope>EVB</scope></search><sort><creationdate>20170629</creationdate><title>LAMINATE</title><author>TOMAI SHIGEKAZU ; TSURUMA YUKI ; TAKESHIMA MOTOHIRO ; KAWASHIMA EMI ; KAMIOKA YOSHIHIRO ; SEKIYA TAKASHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2017118048A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TOMAI SHIGEKAZU</creatorcontrib><creatorcontrib>TSURUMA YUKI</creatorcontrib><creatorcontrib>TAKESHIMA MOTOHIRO</creatorcontrib><creatorcontrib>KAWASHIMA EMI</creatorcontrib><creatorcontrib>KAMIOKA YOSHIHIRO</creatorcontrib><creatorcontrib>SEKIYA TAKASHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TOMAI SHIGEKAZU</au><au>TSURUMA YUKI</au><au>TAKESHIMA MOTOHIRO</au><au>KAWASHIMA EMI</au><au>KAMIOKA YOSHIHIRO</au><au>SEKIYA TAKASHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LAMINATE</title><date>2017-06-29</date><risdate>2017</risdate><abstract>PROBLEM TO BE SOLVED: To provide a semiconductor element having a large reverse withstand voltage and a low forward on-resistance, and capable of extracting a large current, and to provide a laminate for use therein.SOLUTION: A laminate includes at least a conductive substrate 10, a Schottky electrode layer 20, and a metal oxide semiconductor layer 30, in this order. The metal oxide semiconductor layer 30 is a laminate consisting of a laminated structure of more than one layer, one layer composing the metal oxide semiconductor layer 30 is a withstand voltage layer 32 in contact with the Schottky electrode layer 20, another layer is a bulk layer 34 in contact with the withstand voltage layer 32. The average value Nd1 of donor concentration in the withstand voltage layer 32 in the film thickness direction, and the average value Nd2 of donor concentration in the bulk layer 34 in the film thickness direction satisfy a relation Nd1<Nd2.SELECTED DRAWING: Figure 1
【課題】逆方向耐電圧が大きく、かつ順方向オン抵抗が低く、大電流を取り出すことができる半導体素子、及びそれに用いられる積層体を提供する。【解決手段】積層体は、少なくとも導電性基板１０、ショットキー電極層２０、金属酸化物半導体層３０をこの順に含み、金属酸化物半導体層３０が２層以上の積層構造からなる積層体であって、金属酸化物半導体層３０を構成する層のうちの１層はショットキー電極層２０と接する耐圧層３２であり、他の１層は耐圧層３２と接するバルク層３４であり、耐圧層内３２のドナー濃度の膜厚方向の平均値Ｎｄ１及びバルク層内３４のドナー濃度の膜厚方向の平均値Ｎｄ２が、Ｎｄ１＜Ｎｄ２を満たす。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | LAMINATE |
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