LAMINATE

PROBLEM TO BE SOLVED: To provide a semiconductor element having a large reverse withstand voltage and a low forward on-resistance, and capable of extracting a large current, and to provide a laminate for use therein.SOLUTION: A laminate includes at least a conductive substrate 10, a Schottky electrode layer 20, and a metal oxide semiconductor layer 30, in this order. The metal oxide semiconductor layer 30 is a laminate consisting of a laminated structure of more than one layer, one layer composing the metal oxide semiconductor layer 30 is a withstand voltage layer 32 in contact with the Schottky electrode layer 20, another layer is a bulk layer 34 in contact with the withstand voltage layer 32. The average value Nd1 of donor concentration in the withstand voltage layer 32 in the film thickness direction, and the average value Nd2 of donor concentration in the bulk layer 34 in the film thickness direction satisfy a relation Nd1