COATED SUBSTRATE AND PROCESS FOR CUTTING A COATED SUBSTRATE

PROBLEM TO BE SOLVED: To cut a sapphire substrate having an absorptive and/or barrier layer by using a laser, thereby to form a sapphire part.SOLUTION: Provided are a system and a method for forming a sapphire component. This method includes: disposing an absorptive-barrier layer on a first surface...

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Bibliographische Detailangaben
Hauptverfasser:	SUN YULEI, ANTHONY J RICHTER, MICHAEL M LEE, RAUL A MOLINA
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING CRYSTAL GROWTH CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SOLDERING OR UNSOLDERING TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To cut a sapphire substrate having an absorptive and/or barrier layer by using a laser, thereby to form a sapphire part.SOLUTION: Provided are a system and a method for forming a sapphire component. This method includes: disposing an absorptive-barrier layer on a first surface of a sapphire substrate; cutting the sapphire substrate by using a laser beam incident on the absorptive-barrier layer; and forming and removing a molten sapphire from a cut portion. Moreover, the method further includes: shielding a region of the first surface adjacent to the cut portion from the molten sapphire by using the absorptive-barrier layer, and removing the absorptive-barrier layer from the first surface of the sapphire substrate.SELECTED DRAWING: Figure 3 【課題】レーザを使用して、吸収及び／又はバリア層を有するサファイア基板をカッティングして、サファイア部品を形成する。【解決手段】サファイアコンポーネントを形成するシステム及び方法。この方法は、サファイア基板の第１表面に吸収・バリア層を配置し、その吸収・バリア層に入射するレーザビームを使用してサファイア基板のカッティングを行い、そして溶融サファイアを生成してそれをカット部から除去することを含む。又、この方法は、吸収・バリア層を使用して溶融サファイアからカット部に隣接する第１表面の領域をシールドし、そしてサファイア基板の第１表面から吸収・バリア層を除去することも含む。【選択図】図３