PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION DEVICE USING THE SAME

PROBLEM TO BE SOLVED: To provide a photoelectric conversion element which allows use of a silicon-containing substrate and has higher photosensitivity in an ultraviolet region, especially in a wavelength region of 200 nm-400 nm, and provide a photoelectric conversion device such as an ultraviolet sensor using the photoelectric conversion element.SOLUTION: A photoelectric conversion element 10 includes: a P-type or N-type semiconductor substrate 11; an N-type or P-type semiconductor layer 12 which is formed in the semiconductor substrate 11 to form PN junction with the semiconductor substrate 11; and anti-reflection film formed on the semiconductor layer 12. The anti-reflection film has lower reflectance against a wavelength region of 200 nm-400 nm than reflectance against other wavelength regions in order to suppress reflectivity of light in the wavelength of 200 nm-400 nm. Further, the anti-reflection film includes a first insulation film 14 which has an extinction coefficient against the wavelength region of 200 nm-400 nm is equal to or less than 0.01 in order to inhibit light absorption in the wavelength region of 200 nm-400 nm.SELECTED DRAWING: Figure 1 【課題】シリコンを含む基板の使用を可能としつつも紫外線領域、特に２００ｎｍ〜４００ｎｍの波長領域において高い光感度を有する光電変換素子およびそれを用いた紫外線センサ等の光電変換装置を提供する。【解決手段】光電変換素子１０は、Ｐ型またはＮ型の半導体基板１１と、半導体基板１１内に形成され、半導体基板１１とＰＮ接合を形成するＮ型またはＰ型の半導体層１２と、半導体層１２の上に形成された反射防止膜とを備える。反射防止膜は、２００ｎｍ〜４００ｎｍの波長領域の光の反射を抑制すべく、この波長領域に対する反射率が他の波長領域に対する反射率よりも低い。また、反射防止膜は、２００ｎｍ〜４００ｎｍの波長領域の光吸収を抑制すべく、この波長領域に対する消衰係数が０．０１以下である第１の絶縁膜１４を含んでいる。【選択図】図１