DIELECTRIC STACK, ISOLATOR DEVICE, AND METHOD OF FORMING ISOLATOR DEVICE
PROBLEM TO BE SOLVED: To enhance ability to withstand an electric field generated at an edge of a conductor by making a body of a first dielectric tapered to provide stress relief to be able to prevent a second dielectric material from developing stress cracks.SOLUTION: An isolator device is provide...
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| creator | MICHAEL MORRISSEY PATRICK J MURPHY LAURENCE B O'SULLIVAN PATRICK M MCGUINNESS STEPHEN O'BRIEN CHEN BAOXING BERNARD P STENSON SARAH CARROLL CONOR JOHN MCLOUGHLIN MICHAL J OSIAK SHANE GEARY MICHAEL JOHN FLYNN |
| description | PROBLEM TO BE SOLVED: To enhance ability to withstand an electric field generated at an edge of a conductor by making a body of a first dielectric tapered to provide stress relief to be able to prevent a second dielectric material from developing stress cracks.SOLUTION: An isolator device is provided which comprises a body of first dielectric material between first and second conductors such as primary and secondary coils of a micro-transformer. A region of the second dielectric material is provided between the body of the first dielectric material and at least one of first and second electrodes, and the second dielectric material has a higher relative permittivity than the first dielectric material.SELECTED DRAWING: Figure 1
【課題】導電体の縁部に発生する電場に耐える能力を向上させる。第１の誘電体の本体は、応力除去を提供するためにテーパ状であり、第２の誘電体材料が応力亀裂を発生するのを防止することができる。【解決手段】第１および第２の導電体、例えばマイクロトランスの１次コイルと２次コイルとの間に第１の誘電体材料の本体を備える、アイソレータ装置が提供される。第２の誘電体材料の領域は、第１の誘電体材料の本体と第１および第２の電極のうちの少なくとも１つとの間に提供され、第２の誘電体材料が、第１の誘電体材料より高い比誘電率を有する。【選択図】図１ |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2017085098A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2017085098A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2017085098A3</originalsourceid><addsrcrecordid>eNrjZPBw8XT1cXUOCfJ0VggOcXT21lHwDPb3cQzxD1JwcQ3zdHbVUXD0c1HwdQ3x8HdR8HdTcPMP8vX0c0dXxsPAmpaYU5zKC6W5GZTcXEOcPXRTC_LjU4sLEpNT81JL4r0CjAwMzQ0sTA0sLRyNiVIEACmYLO4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>DIELECTRIC STACK, ISOLATOR DEVICE, AND METHOD OF FORMING ISOLATOR DEVICE</title><source>esp@cenet</source><creator>MICHAEL MORRISSEY ; PATRICK J MURPHY ; LAURENCE B O'SULLIVAN ; PATRICK M MCGUINNESS ; STEPHEN O'BRIEN ; CHEN BAOXING ; BERNARD P STENSON ; SARAH CARROLL ; CONOR JOHN MCLOUGHLIN ; MICHAL J OSIAK ; SHANE GEARY ; MICHAEL JOHN FLYNN</creator><creatorcontrib>MICHAEL MORRISSEY ; PATRICK J MURPHY ; LAURENCE B O'SULLIVAN ; PATRICK M MCGUINNESS ; STEPHEN O'BRIEN ; CHEN BAOXING ; BERNARD P STENSON ; SARAH CARROLL ; CONOR JOHN MCLOUGHLIN ; MICHAL J OSIAK ; SHANE GEARY ; MICHAEL JOHN FLYNN</creatorcontrib><description>PROBLEM TO BE SOLVED: To enhance ability to withstand an electric field generated at an edge of a conductor by making a body of a first dielectric tapered to provide stress relief to be able to prevent a second dielectric material from developing stress cracks.SOLUTION: An isolator device is provided which comprises a body of first dielectric material between first and second conductors such as primary and secondary coils of a micro-transformer. A region of the second dielectric material is provided between the body of the first dielectric material and at least one of first and second electrodes, and the second dielectric material has a higher relative permittivity than the first dielectric material.SELECTED DRAWING: Figure 1
【課題】導電体の縁部に発生する電場に耐える能力を向上させる。第１の誘電体の本体は、応力除去を提供するためにテーパ状であり、第２の誘電体材料が応力亀裂を発生するのを防止することができる。【解決手段】第１および第２の導電体、例えばマイクロトランスの１次コイルと２次コイルとの間に第１の誘電体材料の本体を備える、アイソレータ装置が提供される。第２の誘電体材料の領域は、第１の誘電体材料の本体と第１および第２の電極のうちの少なくとも１つとの間に提供され、第２の誘電体材料が、第１の誘電体材料より高い比誘電率を有する。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRICITY ; INDUCTANCES ; MAGNETS ; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES ; TRANSFORMERS</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170518&DB=EPODOC&CC=JP&NR=2017085098A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170518&DB=EPODOC&CC=JP&NR=2017085098A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MICHAEL MORRISSEY</creatorcontrib><creatorcontrib>PATRICK J MURPHY</creatorcontrib><creatorcontrib>LAURENCE B O'SULLIVAN</creatorcontrib><creatorcontrib>PATRICK M MCGUINNESS</creatorcontrib><creatorcontrib>STEPHEN O'BRIEN</creatorcontrib><creatorcontrib>CHEN BAOXING</creatorcontrib><creatorcontrib>BERNARD P STENSON</creatorcontrib><creatorcontrib>SARAH CARROLL</creatorcontrib><creatorcontrib>CONOR JOHN MCLOUGHLIN</creatorcontrib><creatorcontrib>MICHAL J OSIAK</creatorcontrib><creatorcontrib>SHANE GEARY</creatorcontrib><creatorcontrib>MICHAEL JOHN FLYNN</creatorcontrib><title>DIELECTRIC STACK, ISOLATOR DEVICE, AND METHOD OF FORMING ISOLATOR DEVICE</title><description>PROBLEM TO BE SOLVED: To enhance ability to withstand an electric field generated at an edge of a conductor by making a body of a first dielectric tapered to provide stress relief to be able to prevent a second dielectric material from developing stress cracks.SOLUTION: An isolator device is provided which comprises a body of first dielectric material between first and second conductors such as primary and secondary coils of a micro-transformer. A region of the second dielectric material is provided between the body of the first dielectric material and at least one of first and second electrodes, and the second dielectric material has a higher relative permittivity than the first dielectric material.SELECTED DRAWING: Figure 1
【課題】導電体の縁部に発生する電場に耐える能力を向上させる。第１の誘電体の本体は、応力除去を提供するためにテーパ状であり、第２の誘電体材料が応力亀裂を発生するのを防止することができる。【解決手段】第１および第２の導電体、例えばマイクロトランスの１次コイルと２次コイルとの間に第１の誘電体材料の本体を備える、アイソレータ装置が提供される。第２の誘電体材料の領域は、第１の誘電体材料の本体と第１および第２の電極のうちの少なくとも１つとの間に提供され、第２の誘電体材料が、第１の誘電体材料より高い比誘電率を有する。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRICITY</subject><subject>INDUCTANCES</subject><subject>MAGNETS</subject><subject>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</subject><subject>TRANSFORMERS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPBw8XT1cXUOCfJ0VggOcXT21lHwDPb3cQzxD1JwcQ3zdHbVUXD0c1HwdQ3x8HdR8HdTcPMP8vX0c0dXxsPAmpaYU5zKC6W5GZTcXEOcPXRTC_LjU4sLEpNT81JL4r0CjAwMzQ0sTA0sLRyNiVIEACmYLO4</recordid><startdate>20170518</startdate><enddate>20170518</enddate><creator>MICHAEL MORRISSEY</creator><creator>PATRICK J MURPHY</creator><creator>LAURENCE B O'SULLIVAN</creator><creator>PATRICK M MCGUINNESS</creator><creator>STEPHEN O'BRIEN</creator><creator>CHEN BAOXING</creator><creator>BERNARD P STENSON</creator><creator>SARAH CARROLL</creator><creator>CONOR JOHN MCLOUGHLIN</creator><creator>MICHAL J OSIAK</creator><creator>SHANE GEARY</creator><creator>MICHAEL JOHN FLYNN</creator><scope>EVB</scope></search><sort><creationdate>20170518</creationdate><title>DIELECTRIC STACK, ISOLATOR DEVICE, AND METHOD OF FORMING ISOLATOR DEVICE</title><author>MICHAEL MORRISSEY ; PATRICK J MURPHY ; LAURENCE B O'SULLIVAN ; PATRICK M MCGUINNESS ; STEPHEN O'BRIEN ; CHEN BAOXING ; BERNARD P STENSON ; SARAH CARROLL ; CONOR JOHN MCLOUGHLIN ; MICHAL J OSIAK ; SHANE GEARY ; MICHAEL JOHN FLYNN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2017085098A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRICITY</topic><topic>INDUCTANCES</topic><topic>MAGNETS</topic><topic>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</topic><topic>TRANSFORMERS</topic><toplevel>online_resources</toplevel><creatorcontrib>MICHAEL MORRISSEY</creatorcontrib><creatorcontrib>PATRICK J MURPHY</creatorcontrib><creatorcontrib>LAURENCE B O'SULLIVAN</creatorcontrib><creatorcontrib>PATRICK M MCGUINNESS</creatorcontrib><creatorcontrib>STEPHEN O'BRIEN</creatorcontrib><creatorcontrib>CHEN BAOXING</creatorcontrib><creatorcontrib>BERNARD P STENSON</creatorcontrib><creatorcontrib>SARAH CARROLL</creatorcontrib><creatorcontrib>CONOR JOHN MCLOUGHLIN</creatorcontrib><creatorcontrib>MICHAL J OSIAK</creatorcontrib><creatorcontrib>SHANE GEARY</creatorcontrib><creatorcontrib>MICHAEL JOHN FLYNN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MICHAEL MORRISSEY</au><au>PATRICK J MURPHY</au><au>LAURENCE B O'SULLIVAN</au><au>PATRICK M MCGUINNESS</au><au>STEPHEN O'BRIEN</au><au>CHEN BAOXING</au><au>BERNARD P STENSON</au><au>SARAH CARROLL</au><au>CONOR JOHN MCLOUGHLIN</au><au>MICHAL J OSIAK</au><au>SHANE GEARY</au><au>MICHAEL JOHN FLYNN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DIELECTRIC STACK, ISOLATOR DEVICE, AND METHOD OF FORMING ISOLATOR DEVICE</title><date>2017-05-18</date><risdate>2017</risdate><abstract>PROBLEM TO BE SOLVED: To enhance ability to withstand an electric field generated at an edge of a conductor by making a body of a first dielectric tapered to provide stress relief to be able to prevent a second dielectric material from developing stress cracks.SOLUTION: An isolator device is provided which comprises a body of first dielectric material between first and second conductors such as primary and secondary coils of a micro-transformer. A region of the second dielectric material is provided between the body of the first dielectric material and at least one of first and second electrodes, and the second dielectric material has a higher relative permittivity than the first dielectric material.SELECTED DRAWING: Figure 1
【課題】導電体の縁部に発生する電場に耐える能力を向上させる。第１の誘電体の本体は、応力除去を提供するためにテーパ状であり、第２の誘電体材料が応力亀裂を発生するのを防止することができる。【解決手段】第１および第２の導電体、例えばマイクロトランスの１次コイルと２次コイルとの間に第１の誘電体材料の本体を備える、アイソレータ装置が提供される。第２の誘電体材料の領域は、第１の誘電体材料の本体と第１および第２の電極のうちの少なくとも１つとの間に提供され、第２の誘電体材料が、第１の誘電体材料より高い比誘電率を有する。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRICITY INDUCTANCES MAGNETS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES TRANSFORMERS |
| title | DIELECTRIC STACK, ISOLATOR DEVICE, AND METHOD OF FORMING ISOLATOR DEVICE |
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