RESISTIVE MEMORY AND METHOD FOR MANUFACTURING THE SAME
PROBLEM TO BE SOLVED: To provide a resistive memory capable of preventing unsuccessful resetting by protecting a sidewall of a memory cell and further improving high-temperature data retention (HTDR), and a method for manufacturing the same.SOLUTION: A resistive memory 100 includes a first electrode...
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| Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a resistive memory capable of preventing unsuccessful resetting by protecting a sidewall of a memory cell and further improving high-temperature data retention (HTDR), and a method for manufacturing the same.SOLUTION: A resistive memory 100 includes a first electrode 106a, a second electrode 118a, a variable resistance layer 108a, an oxygen exchange layer 114a, and a protective layer 112a. The first electrode and second electrode are arranged so as to face each other. The variable resistance layer is arranged between the first electrode and the second electrode. The oxygen exchange layer is arranged between the variable resistance layer and the second electrode. The protective layer is arranged on at least a sidewall of the oxygen exchange layer.SELECTED DRAWING: Figure 1-5
【課題】メモリセルの側壁を保護して、リセット失敗を防ぎ、高温データ保護（ＨＴＤＲ）をさらに高めることのできる抵抗性メモリおよびその製造方法を提供する。【解決手段】抵抗性メモリ１００は、第１電極１０６ａ、第２電極１１８ａ、可変抵抗層１０８ａ、酸素交換層１１４ａ、および保護層１１２ａを含む。第１電極および第２電極は、互いに対向して配置される。可変抵抗層は、第１電極と第２電極の間に配置される。酸素交換層は、可変抵抗層と第２電極の間に配置される。保護層は、酸素交換層の少なくとも側壁に配置される。【選択図】図１-５ |
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