SAPPHIRE SINGLE CRYSTAL MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a sapphire single crystal capable of surely reducing a transition distance (ΔT) from a neck to a barrel and realizing ΔT reduction without complicating a manufacturing apparatus and a high cost, and a manufacturing method of the same.SOLUTION: A manufacturing method...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SAITO HIROTOMO, HIGUCHI KAZUTO, FURUTAKI TOSHIRO, SATO TSUGIO, KAMATA KAZUHIKO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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