MANUFACTURING METHOD OF BARRIER FILM AND PLASMA CVD APPARATUS
PROBLEM TO BE SOLVED: To provide a technology to increase a film deposition rate without accompanying a large scale change of a system configuration, in a film deposition by a plasma CVD method.SOLUTION: A manufacturing method of a barrier film according to the invention forms a barrier layer contai...
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| creator | KAWAKAMI NOBUYUKI OKIMOTO TADAO JIKO NORIHIRO |
| description | PROBLEM TO BE SOLVED: To provide a technology to increase a film deposition rate without accompanying a large scale change of a system configuration, in a film deposition by a plasma CVD method.SOLUTION: A manufacturing method of a barrier film according to the invention forms a barrier layer containing silicon, carbon and oxygen on one or both sides of a substrate film by a plasma CVD method. Gas for forming the barrier layer of the plasma CVD method contains organic silicon compound gas and oxidizing gas. In a chemical equation when the organic silicon compound is completely oxidized, (A-B)/B is 6.75 or less, where A is a total molecular number of a molecular formed by an oxidation reaction, and B is the number of silicon atoms in the organic silicon compound.SELECTED DRAWING: Figure 1
【課題】プラズマＣＶＤ法でのバリア層の成膜において、装置構成の大がかりな変更を伴うことなく成膜速度を増加できる技術を提供する。【解決手段】本発明は、プラズマＣＶＤ法によって、基材フィルムの片面もしくは両面にケイ素、炭素及び酸素を含むバリア層を形成するバリアフィルムの製造方法であって、前記プラズマＣＶＤ法のバリア層形成用ガスは、有機ケイ素化合物ガス及び酸化性ガスを含有し、前記有機ケイ素化合物を完全に酸化した場合の化学反応式において、酸化反応によって生成する分子の全分子数をＡ、前記有機ケイ素化合物中のケイ素の原子数をＢとするとき、（Ａ−Ｂ）／Ｂの値が６．７５以下であることを特徴とするバリアフィルムの製造方法である。【選択図】図１ |
| format | Patent |
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【課題】プラズマＣＶＤ法でのバリア層の成膜において、装置構成の大がかりな変更を伴うことなく成膜速度を増加できる技術を提供する。【解決手段】本発明は、プラズマＣＶＤ法によって、基材フィルムの片面もしくは両面にケイ素、炭素及び酸素を含むバリア層を形成するバリアフィルムの製造方法であって、前記プラズマＣＶＤ法のバリア層形成用ガスは、有機ケイ素化合物ガス及び酸化性ガスを含有し、前記有機ケイ素化合物を完全に酸化した場合の化学反応式において、酸化反応によって生成する分子の全分子数をＡ、前記有機ケイ素化合物中のケイ素の原子数をＢとするとき、（Ａ−Ｂ）／Ｂの値が６．７５以下であることを特徴とするバリアフィルムの製造方法である。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC HEATING ; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; LAYERED PRODUCTS ; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM ; METALLURGY ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170323&DB=EPODOC&CC=JP&NR=2017057459A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170323&DB=EPODOC&CC=JP&NR=2017057459A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAWAKAMI NOBUYUKI</creatorcontrib><creatorcontrib>OKIMOTO TADAO</creatorcontrib><creatorcontrib>JIKO NORIHIRO</creatorcontrib><title>MANUFACTURING METHOD OF BARRIER FILM AND PLASMA CVD APPARATUS</title><description>PROBLEM TO BE SOLVED: To provide a technology to increase a film deposition rate without accompanying a large scale change of a system configuration, in a film deposition by a plasma CVD method.SOLUTION: A manufacturing method of a barrier film according to the invention forms a barrier layer containing silicon, carbon and oxygen on one or both sides of a substrate film by a plasma CVD method. Gas for forming the barrier layer of the plasma CVD method contains organic silicon compound gas and oxidizing gas. In a chemical equation when the organic silicon compound is completely oxidized, (A-B)/B is 6.75 or less, where A is a total molecular number of a molecular formed by an oxidation reaction, and B is the number of silicon atoms in the organic silicon compound.SELECTED DRAWING: Figure 1
【課題】プラズマＣＶＤ法でのバリア層の成膜において、装置構成の大がかりな変更を伴うことなく成膜速度を増加できる技術を提供する。【解決手段】本発明は、プラズマＣＶＤ法によって、基材フィルムの片面もしくは両面にケイ素、炭素及び酸素を含むバリア層を形成するバリアフィルムの製造方法であって、前記プラズマＣＶＤ法のバリア層形成用ガスは、有機ケイ素化合物ガス及び酸化性ガスを含有し、前記有機ケイ素化合物を完全に酸化した場合の化学反応式において、酸化反応によって生成する分子の全分子数をＡ、前記有機ケイ素化合物中のケイ素の原子数をＢとするとき、（Ａ−Ｂ）／Ｂの値が６．７５以下であることを特徴とするバリアフィルムの製造方法である。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC HEATING</subject><subject>ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>LAYERED PRODUCTS</subject><subject>LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD1dfQLdXN0DgkN8vRzV_B1DfHwd1Hwd1NwcgwK8nQNUnDz9PFVcPRzUQjwcQz2dVRwDnNRcAwIcAxyDAkN5mFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgaG5gam5iamlo7GRCkCAGuxKiA</recordid><startdate>20170323</startdate><enddate>20170323</enddate><creator>KAWAKAMI NOBUYUKI</creator><creator>OKIMOTO TADAO</creator><creator>JIKO NORIHIRO</creator><scope>EVB</scope></search><sort><creationdate>20170323</creationdate><title>MANUFACTURING METHOD OF BARRIER FILM AND PLASMA CVD APPARATUS</title><author>KAWAKAMI NOBUYUKI ; OKIMOTO TADAO ; JIKO NORIHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2017057459A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC HEATING</topic><topic>ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>LAYERED PRODUCTS</topic><topic>LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>KAWAKAMI NOBUYUKI</creatorcontrib><creatorcontrib>OKIMOTO TADAO</creatorcontrib><creatorcontrib>JIKO NORIHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KAWAKAMI NOBUYUKI</au><au>OKIMOTO TADAO</au><au>JIKO NORIHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MANUFACTURING METHOD OF BARRIER FILM AND PLASMA CVD APPARATUS</title><date>2017-03-23</date><risdate>2017</risdate><abstract>PROBLEM TO BE SOLVED: To provide a technology to increase a film deposition rate without accompanying a large scale change of a system configuration, in a film deposition by a plasma CVD method.SOLUTION: A manufacturing method of a barrier film according to the invention forms a barrier layer containing silicon, carbon and oxygen on one or both sides of a substrate film by a plasma CVD method. Gas for forming the barrier layer of the plasma CVD method contains organic silicon compound gas and oxidizing gas. In a chemical equation when the organic silicon compound is completely oxidized, (A-B)/B is 6.75 or less, where A is a total molecular number of a molecular formed by an oxidation reaction, and B is the number of silicon atoms in the organic silicon compound.SELECTED DRAWING: Figure 1
【課題】プラズマＣＶＤ法でのバリア層の成膜において、装置構成の大がかりな変更を伴うことなく成膜速度を増加できる技術を提供する。【解決手段】本発明は、プラズマＣＶＤ法によって、基材フィルムの片面もしくは両面にケイ素、炭素及び酸素を含むバリア層を形成するバリアフィルムの製造方法であって、前記プラズマＣＶＤ法のバリア層形成用ガスは、有機ケイ素化合物ガス及び酸化性ガスを含有し、前記有機ケイ素化合物を完全に酸化した場合の化学反応式において、酸化反応によって生成する分子の全分子数をＡ、前記有機ケイ素化合物中のケイ素の原子数をＢとするとき、（Ａ−Ｂ）／Ｂの値が６．７５以下であることを特徴とするバリアフィルムの製造方法である。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM METALLURGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING |
| title | MANUFACTURING METHOD OF BARRIER FILM AND PLASMA CVD APPARATUS |
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