METHOD FOR MANUFACTURING SURFACE EMITTING SEMICONDUCTOR LASER DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a surface emitting semiconductor laser device improved in humidity resistance in comparison to a method arranged so that a semiconductor layer is just covered with an insulating film.SOLUTION: A method for manufacturing surface emitting semiconductor laser device comprises: a first step for forming, on a substrate (12), a semiconductor layer including a first semiconductor multilayered film reflecting mirror (16) of a first conductivity type, a rough surface-forming layer (60) on the first semiconductor multilayered film reflecting mirror, an active region (24) on the rough surface-forming layer, a second semiconductor multilayered film reflecting mirror (26) of a second conductivity type on the active region, and a current constriction layer (32) close to the active region; a second step for etching the semiconductor layer until the rough surface-forming layer is exposed to form a mesa structure (P) of the semiconductor layer; a third step for oxidizing a region including the rough surface-forming layer exposed around the current-constriction layer and the mesa structure; a fourth step for performing an acid treatment on the oxidized region including the rough surface-forming layer to form a rough surface region (A4); and a fifth step for forming an insulation film (34) on the region including the rough surface region.SELECTED DRAWING: Figure 1 【課題】半導体層を単に絶縁膜で覆う場合と比較して、耐湿性が向上された面発光型半導体レーザ素子の製造方法を提供すること。【解決手段】基板（１２）上に、第１導電型の第１の半導体多層膜反射鏡（１６）、第１の半導体多層膜反射鏡上の粗面形成層（６０）、粗面形成層上の活性領域（２４）、活性領域上の第２導電型の第２の半導体多層膜反射鏡（２６）、及び活性領域に近接する電流狭窄層（３２）を含む半導体層を形成する第１工程と、粗面形成層が露出するまで半導体層をエッチングして半導体層のメサ構造（Ｐ）を形成する第２工程と、電流狭窄層、及びメサ構造の周囲に露出した粗面形成層を含む領域を酸化させる第３工程と、酸化された粗面形成層を含む領域に酸処理を施し粗面領域（Ａ４）を形成する第４工程と、粗面領域を含む領域上に絶縁膜（３４）を形成する第５工程と、を含む。【選択図】図１