SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device.SOLUTION: A semiconductor device manufacturing method comprises the step of forming an opening OP in an insulation film IL formed on a semiconductor substrate SUB. In this step, the insulation film IL is dry etched after a mask layer for formation of the opening OP is formed on the insulation film IL and subsequently, the insulation film IL is wet etched. The dry etching process is terminated before the semiconductor substrate SUB is exposed on a bottom of the opening OP and the wet etching process is terminated after the semiconductor substrate SUB is exposed on the bottom of the opening OP.SELECTED DRAWING: Figure 4 【課題】半導体装置の信頼性を向上させる。【解決手段】半導体基板ＳＵＢ上に形成した絶縁膜ＩＬに開口部ＯＰを形成する。その際、絶縁膜ＩＬ上に開口部ＯＰ形成用のマスク層を形成してから、絶縁膜ＩＬをドライエッチングし、その後、絶縁膜ＩＬをウェットエッチングする。ドライエッチング工程は、開口部ＯＰの底部で半導体基板ＳＵＢが露出する前に終了し、ウェットエッチング工程は、開口部ＯＰの底部で半導体基板ＳＵＢが露出した後に終了する。【選択図】図４