COMPOSITION FOR INSULATING MATERIAL AND ORGANIC THIN-FILM TRANSISTOR USING THE SAME
PROBLEM TO BE SOLVED: To provide a composition for an insulating material, capable of forming a gate insulating layer having a high dielectric constant and a low dielectric loss tangent.SOLUTION: The composition for an insulating material contains a polymer compound having a group represented by for...
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Format: | Patent |
Sprache: | eng ; jpn |
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Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a composition for an insulating material, capable of forming a gate insulating layer having a high dielectric constant and a low dielectric loss tangent.SOLUTION: The composition for an insulating material contains a polymer compound having a group represented by formula (1) in a repeating unit. [In the formula, Rand Reach independently represent a hydrogen atom, an optionally substituted alkyl group, an optionally substituted alkoxy group, a halogen atom, a nitro group, or a cyano group; and Rand Rmay be bonded to each other to form a ring together with carbon atoms to which they are bonded.]SELECTED DRAWING: None
【課題】高誘電率であり、かつ低誘電正接であるゲート絶縁層を形成することができる絶縁材料用組成物を提供することを課題とする。【解決手段】式(1)で表される基を繰り返し単位に有する高分子化合物を含む絶縁材料用組成物。(1)[式中、R2及びR3は、それぞれ独立に水素原子、置換基を有していてもよいアルキル基、置換基を有していてもよいアルコキシ基、ハロゲン原子、ニトロ基又はシアノ基を表す。R2及びR3は、互いに結合し、それらが結合している炭素原子とともに環を形成していてもよい。]【選択図】なし |
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