COMPOSITIONS FOR CHEMICAL VAPOR DEPOSITION

PROBLEM TO BE SOLVED: To provide a method for forming silicon carbo-nitride films on a substrate through chemical vapor deposition at low temperature, using a silicon carbo-nitride film forming precursor not causing any danger in handling and reaction processes.SOLUTION: Silicon carbo-nitride films...

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Bibliographische Detailangaben
Hauptverfasser:	XIAO MANCHAO, HOCHBERG ARTHUR KENNETH
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for forming silicon carbo-nitride films on a substrate through chemical vapor deposition at low temperature, using a silicon carbo-nitride film forming precursor not causing any danger in handling and reaction processes.SOLUTION: Silicon carbo-nitride films are formed using a precursor selected from the group consisting of aminosilanes represented by the formulas in the figure and mixtures thereof, the aminosilanes being liquid at room temperature and room pressure and not generating chlorine or chlorine by-products.SELECTED DRAWING: None 【課題】取扱い及び反応の過程に危険性がない炭窒化ケイ素膜形成用前駆体を用いて、低温で化学気相成長により基材上に炭窒化ケイ素膜を形成するための方法を提供する。【解決手段】以下の式によって表される、室温及び室圧において液体で、塩素及び塩素副生成物を発生しないアミノシラン並びにそれらの混合物からなる群より選択される前駆体を用いて、炭窒化ケイ素膜を形成する。【選択図】なし