POLISHING LIQUID, STORAGE LIQUID AND POLISHING METHOD

PROBLEM TO BE SOLVED: To provide a polishing liquid that makes it possible to polish sapphire at a high polishing rate.SOLUTION: A polishing liquid for polishing a substrate comprising sapphire comprises: at least one large silica with an average primary particle diameter of 60-150 nm; at least one...

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Bibliographische Detailangaben
Hauptverfasser:	GO YUTAKA, INOUE KEISUKE
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a polishing liquid that makes it possible to polish sapphire at a high polishing rate.SOLUTION: A polishing liquid for polishing a substrate comprising sapphire comprises: at least one large silica with an average primary particle diameter of 60-150 nm; at least one small silica with an average primary particle diameter of 40 nm or less; water; and a polishing promoter. A value (L/S) obtained by dividing a large silica content (L) by a small silica content (S) is more than 1, the polishing promoter comprises a cationic surfactant, and the polishing liquid is 7.0-10.4 in pH.SELECTED DRAWING: None 【課題】サファイアを速い研磨速度で研磨することができる研磨液を提供すること。【解決手段】平均一次粒径が６０〜１５０ｎｍである少なくとも１種以上の大シリカ、平均一次粒径が４０ｎｍ以下である少なくとも１種以上の小シリカ、水、及び研磨促進剤を含み、大シリカの含有量（Ｌ）を小シリカの含有量（Ｓ）で除した値（Ｌ／Ｓ）が１超であり、研磨促進剤がカチオン性界面活性剤を含み、ｐＨが７．０〜１０．４である、サファイアを含む基体を研磨するための研磨液。【選択図】なし