PLASMA ETCHING METHOD

PROBLEM TO BE SOLVED: To provide a plasma etching method capable of achieving a high selection ratio of a film or a silicon containing nitrogen and a film containing carbon with respect to a film containing titanium.SOLUTION: In a wafer processing method for selectively performing plasma etching a f...

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Bibliographische Detailangaben
Hauptverfasser:	ISHIMURA HIROAKI, KANAZAWA SHUNSUKE, NISHIMORI YASUHIRO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a plasma etching method capable of achieving a high selection ratio of a film or a silicon containing nitrogen and a film containing carbon with respect to a film containing titanium.SOLUTION: In a wafer processing method for selectively performing plasma etching a film (SiN) containing nitrogen or a film containing silicon and carbon with respect to film (TiN) containing titanium, a film containing nitrogen or a film containing silicon and carbon is subjected to a plasma etching using a gas mixture of a CHF gas and a gas containing oxygen.SELECTED DRAWING: Figure 5 【課題】チタンを含む膜に対する窒素を含有する膜またはシリコンと炭素を含有する膜の高選択比を得ることができるプラズマエッチング方法を提供する。【解決手段】チタンを含有する膜（ＴｉＮ）に対して窒素を含有する膜（ＳｉＮ）またはシリコンと炭素を含有する膜を選択的にプラズマエッチングするプラズマ処理方法において，ＣＨ３Ｆガスと酸素を含有するガスの混合ガスを用いて窒素を含有する膜またはシリコンと炭素を含有する膜をプラズマエッチングする。【選択図】図５