METHOD FOR MANUFACTURING HERMETICALLY SEALED DEVICE

PROBLEM TO BE SOLVED: To adjust pressure between sealed spaces by a simple and highly reliable method in a method for manufacturing a hermetically sealed device using anode junction.SOLUTION: A method for manufacturing a hermetically sealed device 1 comprises the steps of: anode-joining a semiconduc...

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Bibliographische Detailangaben
Hauptverfasser:	KONNO NOBUAKI, SUETSUGU EIJI, YAMAGUCHI YASUO, ITO YASUHIKO, HIRATA YOSHIAKI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT MEASURING MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PHYSICS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES TESTING TRANSPORTING
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Zusammenfassung:	PROBLEM TO BE SOLVED: To adjust pressure between sealed spaces by a simple and highly reliable method in a method for manufacturing a hermetically sealed device using anode junction.SOLUTION: A method for manufacturing a hermetically sealed device 1 comprises the steps of: anode-joining a semiconductor substrate 15 in which a device structure having a movable part 2 is formed and a glass cover 19 under atmospheric pressure and thereby sealing up the device structure; and heating the semiconductor substrate 15 after anode-joining and the glass cover 19 at a temperature that corresponds to a target pressure in order to raise the pressure of a sealed space 20 shut tight by the glass cover 19 to a desired target pressure.SELECTED DRAWING: Figure 2 【課題】陽極接合を用いた気密封止デバイスの製造方法において、簡便にかつ信頼性が高い方法で密閉空間の圧力を調整する。【解決手段】気密封止デバイス１の製造方法は、可動部２を有するデバイス構造が形成された半導体基板１５とガラス製覆い１９とを大気圧下で陽極接合することによって、デバイス構造を密閉するステップと、ガラス製覆い１９によって密閉された密閉空間２０の圧力を所望の目標圧力まで増加させるために、陽極接合後の半導体基板１５およびガラス製覆い１９を目標圧力に応じた温度で加熱するステップとを備える。【選択図】図２