METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a solid-state imaging device capable of reducing a dark current.SOLUTION: According to one embodiment, the method of manufacturing a solid-state imaging device is provided. The method of manufacturing a solid-state imaging device according to the embodiment comprises: forming a photoelectric conversion element in a semiconductor layer; forming an oxide film on that surface of the semiconductor layer which is on the side of a light-receiving surface of the photoelectric conversion element; subjecting the oxide film to a degassing treatment; forming a fixed charge film holding a negative fixed charge, on a surface of the oxide film after the degassing treatment; and subjecting the fixed charge film to a degassing treatment.SELECTED DRAWING: Figure 5 【課題】暗電流を低減することができる固体撮像装置の製造方法を提供すること。【解決手段】一つの実施形態によれば、固体撮像装置の製造方法が提供される。実施形態に係る固体撮像装置の製造方法では、半導体層に光電変換素子を形成し、半導体層における光電変換素子の受光面側表面に酸化膜を形成し、酸化膜の脱ガス処理を行い、脱ガス処理後の酸化膜の表面に負の固定電荷を保持する固定電荷膜を形成する。また、実施形態に係る固体撮像装置の製造方法では、固定電荷膜の脱ガス処理を行う。【選択図】図５