METHOD FOR ANISOTROPIC ETCHING ON HEXAGONAL CRYSTAL BORON NITRIDE

PROBLEM TO BE SOLVED: To provide a method for anisotropic etching, which forms a triangular hole or a polygonal hole in a hexagonal crystal boron nitride or a film of the nitride.SOLUTION: A hexagonal crystal boron nitride or a film 16 of the nitride is formed on a conductive substrate 12 or a non-conductive substrate 14. Next, SiO2 nanoparticles are deposited when the conductive substrate 12 is used, while metal nanoparticles are deposited when the non-conductive substrate 14 is used. After that, anisotropic etching is performed by heating in gas containing hydrogen so that metal residues on the conductive substrate 12 or on the non-conductive substrate 14 are removed with a solvent and the substrate is dried. The hexagonal crystal boron nitride film 16 is thus provided with a triangular hole or a polygonal hole.SELECTED DRAWING: Figure 1 【課題】六方晶窒化ホウ素又はその膜に、三角形、多角形の孔を形成する異方性エッチング方法を提供する。【解決手段】導電性基板１２又は非導電性基板１４上に、六方晶窒化ホウ素またはその膜１６を形成した後、導電性基板１２の場合には、SiO2ナノ粒子を堆積させ、非導電性基板１４の場合には、金属ナノ粒子を堆積させた後に、水素を含むガス中で加熱することによる異方性エッチングを施し、導電性基板１２又は非導電基板１４の金属残渣を溶剤により除去し乾燥させることにより、六方晶窒化ホウ素膜１６に三角形又は多角形の孔を形成する。【選択図】図１