MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To improve the producibility of a semiconductor device.SOLUTION: A manufacturing method of a semiconductor device includes the steps of: (a) forming a circuit on a surface 1t side of a wafer (semiconductor wafer) 10 having the surface 1t and a rear surface on the side opposite...

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Bibliographische Detailangaben
Hauptverfasser: KAINUMA TAKAHIRO, YOSHIHARA TAKAMITSU, OKA HIROTAKE
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To improve the producibility of a semiconductor device.SOLUTION: A manufacturing method of a semiconductor device includes the steps of: (a) forming a circuit on a surface 1t side of a wafer (semiconductor wafer) 10 having the surface 1t and a rear surface on the side opposite to the surface 1t; (b) grinding the rear surface of the wafer 10 having a central part (first portion) 11 and a peripheral part 12 (second portion) surrounding the periphery of the central part 11 so that a thickness of the central part 11 becomes thinner than a thickness of the peripheral part 12; (c) sticking an upper surface (adhesive surface) 31t of a holding tape 31 to the surface 1t of the wafer 10; and (d) cutting a portion of the central part 11 into the central part 11 and the peripheral part 12 with a blade (rotary blade) 36 in the state where the wafer 10 is held by the first tape.SELECTED DRAWING: Figure 19 【課題】半導体装置の製造効率を向上させる。【解決手段】半導体装置の製造方法は、以下の工程を含んでいる。(a)表面1t、表面1tの反対側の裏面を有するウエハ(半導体ウエハ)10の表面1t側に回路を形成する工程。(b)中央部(第1部分)11、および中央部11の周囲を囲む周縁部12(第2部分)を有するウエハ10の裏面を、中央部11の厚さが周縁部12の厚さよりも薄くなるように研削する工程。(c)保持テープ31の上面(接着面)31tをウエハ10の表面1tに貼り付ける工程。(d)ウエハ10が上記第1テープに保持された状態で、ブレード(回転刃)36により中央部11の一部を切断し、中央部11と周縁部12とに切り分ける工程。【選択図】図19