MANUFACTURING METHOD OF VAPOR-DEPOSITED FILM

PROBLEM TO BE SOLVED: To provide a method of reducing a risk of damaging to a film surface by suppressing an abnormal discharge such as an arc discharge, as well as improving adhesion between a substrate film and a vapor deposition layer in performing a plasma treatment on the substrate film.SOLUTIO...

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1. Verfasser: KOMORI TSUNENORI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of reducing a risk of damaging to a film surface by suppressing an abnormal discharge such as an arc discharge, as well as improving adhesion between a substrate film and a vapor deposition layer in performing a plasma treatment on the substrate film.SOLUTION: A manufacturing method of a vapor deposition film forms a vapor deposition layer following a plasma treatment while a substrate film is made to continuously travel, the plasma treatment being a discharge type using a discharge electrode of a planer magnetron type. The discharge electrode consists of a metal material with a sputtering rate of 1.1 by an argon ion of 500 eV.SELECTED DRAWING: Figure 1 【課題】基材フィルム上へのプラズマ処理実施にあたり、基材フィルムと蒸着層の密着性を向上させるとともに、アーク放電等の異常放電を抑え、フィルム表面へのダメージのリスクを低減する方法を提供する。【解決手段】基材フィルムを連続的に走行させながらプラズマ処理を行い、引き続き蒸着層を形成する蒸着フィルムの製造方法であって、該プラズマ処理がプレーナーマグネトロン方式の放電電極を用いた放電方式によるものであり、該放電電極が500eVのアルゴンイオンによるスパッタ率が1.1以下の金属材料からなることを特徴とする蒸着フィルムの製造方法。【選択図】図1