HETEROACENE DERIVATIVE, ORGANIC SEMICONDUCTOR LAYER, AND ORGANIC THIN FILM TRANSISTOR
PROBLEM TO BE SOLVED: To provide a novel heteroacene derivative that is a coating type organic semiconductor material having high carrier mobility and high heat resistance, and an organic semiconductor layer and an organic thin film transistor prepared therewith.SOLUTION: The present invention provi...
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Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a novel heteroacene derivative that is a coating type organic semiconductor material having high carrier mobility and high heat resistance, and an organic semiconductor layer and an organic thin film transistor prepared therewith.SOLUTION: The present invention provides a heteroacene derivative represented by general formula (1) (where substituents Rand Rindependently represent a hydrogen atom or a C1-C20 alkyl group, substituents Rand Rindependently represent a hydrogen atom, a C1-C20 alkyl group, or a silicon-comprising C1-C20 hydrocarbon group, T-Tindependently represent a sulfur atom or an oxygen atom, X is an oxygen atom or a sulfur atom, m and n independently represent an integer of 1 to 10, and a substituent Ar is a C4-C10 aryl group).SELECTED DRAWING: None
【課題】 高いキャリア移動度及び高耐熱性を持つ塗布型の有機半導体材料である新規なヘテロアセン誘導体、これを用いた有機半導体層及び有機薄膜トランジスタを提供する。【解決手段】 下記一般式(1)で示されるヘテロアセン誘導体。【化1】(式中、置換基R1及びR2は、それぞれ独立して水素原子、又は炭素数1〜20のアルキル基を示す。置換基R3及びR4は、それぞれ独立して、水素原子、炭素数1〜20のアルキル基、又はケイ素を含む炭素数1〜20の炭化水素基を示す。T1〜T4は、それぞれ独立して硫黄原子又は酸素原子を示し、Xは、酸素原子又は硫黄原子を示す。m及びnは、それぞれ独立して1〜10のいずれかの整数を示す。置換基Arは炭素数4〜10のアリール基を示す。)【選択図】 なし |
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