SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To facilitate processing of a through electrode hole with a high aspect ratio and concurrently prevent occurrence of voids.SOLUTION: A semiconductor device includes: a first semiconductor substrate; a second semiconductor substrate; a first insulator film which contacts with the first semiconductor substrate and the second semiconductor substrate and is provided between the first semiconductor substrate and the second semiconductor substrate; a first through electrode which penetrates through the first semiconductor substrate; and a second through electrode which penetrates through the second semiconductor substrate. The first through electrode and the second through electrode are connected in the first insulator film.SELECTED DRAWING: Figure 1 【課題】高アスペクト比の貫通電極孔の加工を容易にすると同時にボイドの発生を防ぐこと。【解決手段】半導体装置は、第１半導体基板と、第２半導体基板と、第１半導体基板および第２半導体基板に接触し、第１半導体基板および第２半導体基板の間に設けられた第１絶縁膜と、第１半導体基板を貫通する第１貫通電極と、第２半導体基板を貫通する第２貫通電極とを備え、第１貫通電極および前記第２貫通電極は、第１絶縁膜中で接続されている。【選択図】図１