SPUTTERING TARGET AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a method of manufacturing a divided sputtering target in which a constituent material of a base material exposed from a gap (divisional section) between a plurality of target members can effectively prevent a constituent material of a backing plate form mixing into a...

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Bibliographische Detailangaben
1. Verfasser:	TATENO SATOSHI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method of manufacturing a divided sputtering target in which a constituent material of a base material exposed from a gap (divisional section) between a plurality of target members can effectively prevent a constituent material of a backing plate form mixing into a thin film to be formed.SOLUTION: In a method of manufacturing a divided sputtering target, In or In alloy is mainly interposed on a concave portion of a convexoconcave area of a surface of a base material in an area corresponding to a divisional section formed by arranging target portions with a predetermined gap therebetween; and when the surface of the area of the base material corresponding to the divisional section is analyzed by means of EPMA, an area of the In or In alloy has an area ratio of 40-80% of an observed area.SELECTED DRAWING: Figure 2B 【課題】複数のターゲット部材同士の間の隙間（分割部）から露出する基材の構成材料が、形成される薄膜にバッキングプレートの構成材料の混入を防止できる分割スパッタリングターゲットの製造方法の提供。【解決手段】ターゲット部を所定の間隔をおいて配置することにより形成される分割部に対応する領域における基材の表面の凹凸部の凹部の表面に主にＩｎまたはＩｎ合金を介在させ、基材の分割部に対応する領域の表面をＥＰＭＡで分析した場合に、ＩｎまたはＩｎ合金の領域を観察面積に対して面積比率が４０％以上８０％以下とする分割スパッタリングターゲットの製造方法。【選択図】図２Ｂ