POLISHING COMPOSITION

PROBLEM TO BE SOLVED: To provide a polishing composition which can polish a sapphire wafer at an excellent polishing rate.SOLUTION: A polishing composition comprises a silica particle, a glycol ether compound, and water. A content of the glycol ether compound in the polishing composition is 0.1 mass...

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Bibliographische Detailangaben
Hauptverfasser:	OTO TAKESHI, CHINEN MIKA, MORIYAMA KAZUKI, EZAWA SHUNJI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a polishing composition which can polish a sapphire wafer at an excellent polishing rate.SOLUTION: A polishing composition comprises a silica particle, a glycol ether compound, and water. A content of the glycol ether compound in the polishing composition is 0.1 mass% or more and 10 mass% or less.SELECTED DRAWING: None 【課題】優れた研磨速度でサファイアウェーハを研磨することができる研磨用組成物を提供する。【解決手段】研磨用組成物は、シリカ粒子と、グリコールエーテル化合物と、水と、を含む。研磨用組成物に含まれるグリコールエーテル化合物の含有量は、０．１質量％以上且つ１０質量％以下である。【選択図】なし