SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which a sensitizer can be sufficiently incorporated into a resist film.SOLUTION: The method for manufacturing a semiconductor device relating to an embodiment of the present invention includes: a step of forming an...
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Format: | Patent |
Sprache: | eng ; jpn |
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Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which a sensitizer can be sufficiently incorporated into a resist film.SOLUTION: The method for manufacturing a semiconductor device relating to an embodiment of the present invention includes: a step of forming an energy ray-curable resin layer containing a sensitizer to enhance sensitivity to exposure light on a base region 11 including a semiconductor substrate; a step of irradiating the energy ray-curable resin layer with energy rays to form an underlay film 12b containing the sensitizer; a step of forming a resist film 14a on the underlay film; a step of diffusing the sensitizer from the underlay film to the resist film by a heat treatment; a step of irradiating the resist film where the sensitizer is diffused with exposure light; and a step of developing the resist film irradiated with the exposure light.SELECTED DRAWING: Figure 3
【課題】レジスト膜中に十分に増感剤を含有させることが可能な半導体装置の製造方法を提供する。【解決手段】実施形態に係る半導体装置の製造方法は、半導体基板を含む下地領域11上に、露光光に対する感度を高めるための増感剤を含有したエネルギー線硬化性樹脂層を形成する工程と、エネルギー線硬化性樹脂層にエネルギー線を照射して増感剤を含有した下層膜12bを形成する工程と、下層膜上にレジスト膜14aを形成する工程と、熱処理によって下層膜からレジスト膜中に増感剤を拡散させる工程と、増感剤が拡散したレジスト膜に露光光を照射する工程と、露光光が照射されたレジスト膜を現像する工程と、を備える。【選択図】図3 |
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