OXIDE SEMICONDUCTOR THIN FILM AND THIN FILM TRANSISTOR ELEMENT USING THE SAME, AND DISPLAY ELEMENT

PROBLEM TO BE SOLVED: To achieve a TFT substrate excellent in in-plane uniformity and stability even though an oxide semiconductor is used for a channel layer in a TFT substrate used for a display device such as a liquid crystal display (LCD) and an organic EL display (OLED).SOLUTION: In a radial distribution function χ obtained by an extended X-ray absorption fine structure measurement, a first neighbor atom distribution has two centers of a distribution, and when assuming that the center location of the distribution within a range of 0.8-0.15 Å is La and the center location of the distribution within a range of 0.9-2.0 Å is Lb, film forming conditions of an oxide semiconductor is determined to satisfy a relation that an intensity ratio (χ(Lb)/χ(La)) of the radial distribution function χ is not less than 1.4 and not more than 2.0.SELECTED DRAWING: Figure 3 【課題】 液晶ディスプレイ（LCD）や有機ELディスプレイ（OLED）等の表示デバイスに利用されるTFT基板について、チャネル層に酸化物半導体を用いながら、面内均一性と安定性に優れたTFT基板を得る。【解決手段】 広域X線吸収微細構造測定より得られる動径分布関数χにおいて、第一近接原子分布が二つの分布中心を有し、0.8〜0.15Åの範囲の分布中心位置をLa、0.9〜2.0Åの範囲の分布中心位置をLbとおいたとき、前記動径分布関数χの強度比（χ(Lb)/χ(La)）が1.4以上、2.0以下の関係を満たすように酸化物半導体の製膜条件を決定する。【選択図】 図３