DRY ETCHING METHOD

PROBLEM TO BE SOLVED: To provide a dry etching method for reducing peeling of a sidewall protective film in the etching.SOLUTION: In a dry etching method for etching a workpiece by using an etching gas containing carbon (C) and fluorine (F), while forming a sidewall protective film on the sidewall o...

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Bibliographische Detailangaben
1. Verfasser:	FUNEKAWA TAKEO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GYROSCOPIC INSTRUMENTS IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS MEASURING MEASURING DISTANCES, LEVELS OR BEARINGS NAVIGATION PHOTOGRAMMETRY OR VIDEOGRAMMETRY PHYSICS RESONATORS SEMICONDUCTOR DEVICES SURVEYING TESTING
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a dry etching method for reducing peeling of a sidewall protective film in the etching.SOLUTION: In a dry etching method for etching a workpiece by using an etching gas containing carbon (C) and fluorine (F), while forming a sidewall protective film on the sidewall of the workpiece, the composition ratio (fluorine (F)/carbon (C)) of fluorine (F) and carbon (C) of the sidewall protective film is 2.0 or more and 7.8 or less.SELECTED DRAWING: Figure 6 【課題】エッチング中の側壁保護膜の剥離を低減させるドライエッチング方法を提供すること。【解決手段】本発明のドライエッチング方法は、炭素（Ｃ）およびフッ素（Ｆ）を含むエッチングガスを用い、被加工物の側壁に側壁保護膜を形成しながら前記被加工物をエッチングするドライエッチング方法であって、前記側壁保護膜のフッ素（Ｆ）と炭素（Ｃ）との組成比（フッ素（Ｆ）／炭素（Ｃ））を、２．０以上７．８以下とすることを特徴とする。【選択図】図６