MANUFACTURING METHOD OF EMITTER
PROBLEM TO BE SOLVED: To provide an emitter which is capable of returning a crystal structure of a head end into an original state with high reproducibility by re-arraying atoms by treatment, and is available continuously for a long time by suppressing rise of an extraction voltage after the treatme...
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Zusammenfassung: | PROBLEM TO BE SOLVED: To provide an emitter which is capable of returning a crystal structure of a head end into an original state with high reproducibility by re-arraying atoms by treatment, and is available continuously for a long time by suppressing rise of an extraction voltage after the treatment.SOLUTION: A manufacturing method of the emitter includes: an electrolytic polishing step S10 for performing electrolytic polishing on a front end portion of an emitter material so as to gradually reduce a diameter towards a front end; a first etching step S20 for etching a processed portion in the emitter material by irradiating the processed portion with charged particle beams, and forming a sharpened part in a pyramidal shape with the front end as an apex; a second etching step S30 for further sharpening the front end by field induction gas etching while observing a crystal structure of the front end in the sharpened part with a field ion microscope, and making the number of atoms forming the head end equal to or less than a fixed number; and a heating step S40 for heating the emitter material to array the atoms forming the head end of the sharpened part in a pyramidal shape.SELECTED DRAWING: Figure 5
【課題】トリートメントによる原子の再配列によって、その最先端の結晶構造を再現性良く元の状態に戻すことができると共に、トリートメント後の引出電圧の上昇を抑制でき、長く使用し続けることができるエミッタを得ること。【解決手段】エミッタ素材の先端部を電解研磨加工し、先端に向かって漸次縮径するように加工する電解研磨工程S10と、エミッタ素材における前記加工部分に荷電粒子ビームを照射してエッチング加工を行い、先端を頂点とした角錐状の先鋭部を形成する第1エッチング工程S20と、先鋭部における先端の結晶構造を電界イオン顕微鏡で観察しながら、該先端を電界誘起ガスエッチング加工によりさらに先鋭化させ、その最先端を構成する原子数を一定数以下とさせる第2エッチング工程S30と、エミッタ素材を加熱して、先鋭部の最先端を構成する原子をピラミッド状に配列させる加熱工程S40と、を備えるエミッタの作製方法を提供する。【選択図】図5 |
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