MAGNETIC SHIELD PACKAGE OF MAGNETIC NONVOLATILE MEMORY ELEMENT

PROBLEM TO BE SOLVED: To provide a magnetic shield package of a magnetic nonvolatile memory element that has high magnetic shield effect.SOLUTION: A magnetic shield package of a magnetic nonvolatile memory element includes: a support plate 1 made of a soft magnetic material; a first insulation mater...

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Bibliographische Detailangaben
Hauptverfasser: CHIKAI TOMOYA, TAMAGAWA MICHIAKI, WATANABE SHINJI, IWASAKI TOSHIHIRO, ISHIDO KIMINORI, MATSUBARA HIROAKI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a magnetic shield package of a magnetic nonvolatile memory element that has high magnetic shield effect.SOLUTION: A magnetic shield package of a magnetic nonvolatile memory element includes: a support plate 1 made of a soft magnetic material; a first insulation material layer 13 formed on the support plate; a nonvolatile memory element 11 which has a surface on the opposite surface from an element surface fixed onto the first insulation material layer; a second insulation material layer 14 which seals the magnetic nonvolatile memory element and its periphery; a wiring layer 15a provided in the second insulation material layer; a magnetic body layer 15b provided in the second insulation material layer and made of a soft magnetic material; an electrically conductive part 16 provided in the second insulation material layer and connecting together an electrode on the element surface and the wiring layer of the magnetic nonvolatile memory element provided in the second insulation material layer; and a magnetic shield member 17b including a soft magnetic material while arranged in a wall shape at an interval with the magnetic nonvolatile memory element side face to surround a part or the whole of the magnetic nonvolatile memory element side face, the magnetic body layer and magnetic shield member being magnetically connected to each other.SELECTED DRAWING: Figure 1 【課題】高い磁気シールド効果を有する磁気不揮発性メモリ素子の磁気シールドパッケージの提供。【解決手段】軟磁性材料からなる支持板1と、支持板上に形成された第1の絶縁材料層13と、第1の絶縁材料層上に素子面と反対側の面が固着された磁気不揮発性メモリ素子11と、磁気不揮発性メモリ素子及びその周辺を封止する第2の絶縁材料層14と、第2の絶縁材料層内に設けられた配線層15aと、第2の絶縁材料層内に設けられた軟磁性材料からなる磁性体層15bと、第2の絶縁材料層内に設けられ磁気不揮発性メモリ素子の素子回路面の電極と配線層とを接続する導電部16と、磁気不揮発性メモリ素子側面から間隔を置いて磁気不揮発性メモリ素子側面の一部又は全部を囲うように壁状に配置された軟磁性材料を含む磁気シールド部材17bとを含み、磁性体層と前記磁気シールド部材とは磁気的に接続されている磁気不揮発性メモリ素子の磁気シールドパッケージ。【選択図】図1