SUBSTRATE PROCESSING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To reduce damage to a substrate and such by using plasma when processing a substrate and reduce a substrate processing temperature.SOLUTION: The substrate processing apparatus includes: a reaction tube, accommodating a substrate holding tool for loading and holding a plurality...
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Zusammenfassung: | PROBLEM TO BE SOLVED: To reduce damage to a substrate and such by using plasma when processing a substrate and reduce a substrate processing temperature.SOLUTION: The substrate processing apparatus includes: a reaction tube, accommodating a substrate holding tool for loading and holding a plurality of substrates and a heat insulation part installed under the substrate holding tool, having inside a processing chamber for processing the substrates; a buffer chamber for generating plasma in the reaction tube; and a protective tube, having a rod-shaped electrode inside, erected along a loading direction of the substrate in the buffer chamber. The protective tube is installed in the buffer chamber by penetrating the reaction tube, and is provided outside of the reaction tube at a height position of the insulation part in the reaction tube.SELECTED DRAWING: Figure 3
【課題】プラズマを利用して基板を処理する際に基板等へのダメージを小さくし、しかも基板処理温度を低くする。【解決手段】複数の基板を積載して保持する基板保持具および基板保持具の下部に設置された断熱部を収納し、基板を処理する処理室を内部に有する反応管と、反応管内でプラズマを生成するバッファ室と、 棒状電極を内部に有し、バッファ室内に基板の積載方向に沿って立設される保護管と、を備え、保護管は、反応管を貫通してバッファ室内に設置され、反応管内の断熱部の高さ位置においては反応管の外側に設けられる。【選択図】図3 |
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