SEMICONDUCTOR LIGHT-EMITTING ELEMENT

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element suitable to high luminance.SOLUTION: A semiconductor light-emitting element includes: a first semiconductor layer of a first conductivity type which is formed on a first electrode; second semiconductor layers 17, 18 of a second conductivity type different from the first conductivity type which are arranged on the first semiconductor layer, have a first irregularity part on the surface opposite to the first semiconductor layer side; an active layer which is formed between the first semiconductor layer and the second semiconductor layers; and a second electrode 3 which is formed in close contact with the surface having the first irregularity part on the second semiconductor layers, has a second irregularity part corresponding to the first irregularity part, having the difference of elevation smaller than that between the apex of the salient and the bottom of the recess of the first irregularity part, and having the salient with the curved apex on the surface opposite to the second semiconductor layer side, and transmits light emitted by the active layer.SELECTED DRAWING: Figure 3 【課題】高輝度化に適した半導体発光素子を提供する。【解決手段】半導体発光素子は、第１の電極上に形成された第１導電型の第１の半導体層と、第１の半導体層上に配置され、第１の半導体層側とは反対側の表面に第１の凹凸部を備え、第１導電型とは異なる第２導電型の第２の半導体層１７，１８と、第１の半導体層と第２の半導体層との間に形成された活性層と、第２の半導体層における第１の凹凸部を備えた表面に密着して形成され、第２の半導体層側とは反対側の表面に、第１の凹凸部に対応し且つその高低差が記第１の凹凸部の凸部の頂部と凹部の底部との高低差よりも小さく、該凸部の頂部が湾曲した第２の凹凸部を備え、活性層によって発光された光を透過させる第２の電極３とを有する。【選択図】図３